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Filtering by: DOI 10.1063/1.3672161 Advisor Graham, Matt W.

Investigating Carrier Temperature in LED Quantum Well Driven Below the Turn-On Voltage

Creator:

Jeliazkova, Michelle

Abstract:

Electron behavior in semiconductor materials critically determines electronic applications. Previous research has shown carrier temperature higher than the lattice temperature of LEDs due to energy differences in the quantum well. Study of these findings requires a novel set-up to dig out weak signal in a thermal-noise filled environment; analytical methods...

Resource Type:

Honors College Thesis

Full Text:

of Applied Physics, 69(2), 827-829. https://doi.org/10.1063/1.348919 [5] Santhanam, P., & Fan
Electrical Transport Measurements Show Intrinsic Doping and Hysteresis in Graphene p-n Junction Devices

Creator:

Plunkett, Garrett R.

Abstract:

Understanding the electrical transport properties of graphene provides a basis for determining its future as a potential semiconducting device that can be used for the next generation of transistors and photodetectors. Graphene p-n junctions can also function as field effect transistors, and thus are a logical starting point for I-V...

Resource Type:

Undergraduate Thesis