Semiconductors serve an integral role in our technologies today. However, with new advancements in ultra-fast electronics, we are approaching the fundamental speed limits of traditional silicon-based semiconductors. Silicon-based semiconductors typically exhibit photocarrier dynamics in nanosecond timescales. Transition metal dichalcogenides (TMDs) are 2D materials shown to exhibit photocarrier dynamics in picosecond...
Terahertz (THz) frequencies of the electromagnetic spectrum have been underutilized when compared to neighboring microwave and infrared frequencies, largely due to the difficulties controlling and detecting these fields. In a step toward gaining control over THz frequencies, my advisor Dr. Yun-Shik Lee’s group experimentally demonstrated optical-pulse THz-control over a plasmonic...
Terahertz (THz) time-domain spectroscopy provides insight into electron dynamics in semiconductor heterostructures. High-field THz spectroscopy probes the excitonic nonlinear response of GaAs quantum well (QW) systems and enables the measurement of its coherent dynamics in the time-domain. Consequently, THz spectroscopy allows one to explore the fundamental properties of many-body interactions...
Terahertz (THz) spectroscopy is a great tool not only to study fundamental physical processes such as many-body Coulomb interaction but also to develop ultrafast electronic devices. More specifically, intense THz fields interacting with semiconductors have exhibited strong nonlinear effect involving extreme carrier dynamics. In this experiment, intense THz radiation was...
Plasmon induced transparency (PIT) describes a spectral response of coupled plasmonic resonators in that coupling between bright and dark modes leads to a destructive interference resulting in a narrow transparency window. This process has many applications in material characterization and advanced optical devices such as slow light devices or ultrafast...
This dissertation covers my work relating to the application of strong terahertz (THz) radiation to study the nonlinear properties of nano-scale material. It presents experimental and numerical studies on the optical and electronic properties of various material system including single-layer graphene, multi-walled carbon nanotubes (MWCNTs), nanoantenna-patterned gallium arsenide (GaAs) and...
Carbon nanotubes are the subject of intense interest in virtually every field, from medicine to
nano-scale electrical components. Multi-walled nanotubes exhibit a strong nonlinear response
to high-field strength terahertz radiation. This research uses terahertz pulses with field strength
exceeding 1 MV/cm generated by means of optical rectification utilizing a lithium...
This dissertation is an exploration of the material response to Terahertz (THz) radiation. Specifically we will explore the ultrafast electron dynamics in the nonperturbative regime in semiconductors that have been patterned with nanoantenna arrays using broadband, high intensity, THz radiation. Three main semiconductor materials will be studied in this work....
This dissertation presents nonlinear terahertz (THz) properties of carbon nanomaterials investigated by time-resolved high-field THz spectroscopy. In order to determine THz characteristics of nanomaterials, we performed THz power spectrum measurement, THz raster imaging, THz time-domain spectroscopy (THz-TDS) and time-resolved pump-probe experiment on two different types of single layer graphene and...
High field time-domain terahertz spectroscopy (TDS) is used to determine the time dependent transmission and the time-delay and optical-power dependent conductivity of a wafer of gallium arsenide (GaAs). Gallium arsenide is a direct band-gap semiconductor and has potential as a computer processor component. Analysis of the transmission of terahertz (THz)...