The extremely fast ionization process in semiconductors offers a means of generating pulses that have sub -nanosecond rise times and high peak powers. There are several important applications of these pulses which require the duration of the generated pulse to be variable. This thesis investigates three methods of producing variable...
This thesis presents a limited investigation of the effects
of various etches on the surface properties of silicon. Surface
recombination velocities of silicon under different etching treatments
are compared by using the photoelectromagnetic effect. A
measure of the minority carriers lifetime by the photoconductive
decay method provides another means of...
The recent development of the laser has made possible
communications with a beam of coherent light.
Since coherent light offers great advantages over radio
in the areas of beam directivity and information capacity,
optical communication systems have been proposed
for many uses.
The first section of this thesis gives a...
The selective masking effect of a thermally grown layer of silicon
dioxide has been widely utilized as a technique for controlling the
geometry and impurity concentration in semi-conductor device technology.
It is also recognized that the passivation of the silicon surface
by the vitreous silicon dioxide envelope protects the underlying...
This paper presents an investigation of the power needs and
impedance-matching techniques involved when heating small charges of
relatively high-resistivity semiconductor materials. Topics of discussion
also include a brief section on the theoretical basis for
zone refining, relative merits of resistance and induction heating,
travel mechanism requirements, and work coil...
Some important factors that affect the dimensional
control of oxide films on silicon were studied. Both N- and
P-type silicon with resistivities in the range of
0.014 to 200 ohm-cm and a (111) surface orientation
were employed in this experiment. The etching rates of
silicon dioxide in hydrofluoric acid (111)...
Application of automatic production techniques to the fabrication
of semiconductor devices has been somewhat limited by the requirements
of conventional alloying techniques. These alloying techniques
require an excessive amount of individual handling.
This thesis investigates the feasibility of applying percussive
welding to the fabrication of metal-semiconductor contacts, as a
solution...
In this paper, the theory of metal-semiconductor contacts was
applied to metal contacts on gallium arsenide. A model was discussed
which proposed that the contact resistance was due to a highly
resistive region between the metal and the semiconductor. In order
to evaluate this resistance, a technique using a VHF...
The experimental procedure for reactively sputtering
films of silicon nitride together with the methods for
measuring the film thickness have been investigated.
Some of the properties of these nitride films were studied.
These properties included: infrared spectrum,
etching properties, and index of refraction. The adherence
of the films was also...
This thesis presents some experimental results for
producing controlled PN and NPN diffused structures in
silicon by varying the strength of the diffusion sources.
Boron diffusions were carried out in a N₂ atmosphere at
1200°C with 10%, 20%, 30% and 40% B₂0₃ in silicic acid as
sources. Phosphorus diffusions were...
The force, temperature, and time relationships were
investigated by using oscilloscope measurement techniques. Force was measured using a strain gage and the dynamic
response recorded with a polaroid oscilloscope camera.
Temperature was measured with a tungsten-rhenium thermocouple
and recorded in the same manner. Residual stress
measurements were made to determine...
Changes in the diode characteristics of three different
types of diodes were studied. These were point-contact, bonded and zinc-diffused diodes. The parameters
in which measurable changes were observed were the forward
resistance, the reverse breakdown voltage, the
forward "knee" of the diode curve and the constant of
proportionality relating the...
Analysis, coupled with an experimental investigation, is an important step in the design process of
electronic circuits. Fortunately, with the development
of computer programs to perform general network analysis,
the job of analyzing relatively complex networks is not
as formidable as it once was. This investigation develops guidelines for efficiently...
The
experimental
procedure
for
evaporating
silicon
monoxide
together
with
the
methods
for
measuring
the film
thickness
have
been
investigated.
The
effects
of
various
process
parameters
on
the
rate
of
deposition,
such
as
source
temperature
and
source-substrate
distance,
have
been
studied.
The
uniformity
of
silicon
monoxide
films
deposited
by
this
particular...
This paper is concerned with the determination of
gallium arsenide resistivity by measurement of attenuation of microwave energy at 7500 megacycles transmitted
through a slice.
The first section of this paper describes gallium
arsenide properties as compared to silicon, germanium,
silicon carbide, and diamond. A description is then
given of...