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Filtering by: Alternative title ssim Monograph number 36 Remove constraint Alternative title ssim: Monograph number 36 Advisor Looney, James C. Remove constraint Advisor: Looney, James C. Decade 1960-1969 Remove constraint Decade: 1960-1969

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  • Circuit characterization for efficient computer analysis

    Creator:
    Magnuson, Waldo George
    Abstract:
    Analysis, coupled with an experimental investigation, is an important step in the design process of electronic circuits. Fortunately, with the development of computer programs to perform general network analysis, the job of analyzing relatively complex networks is not as formidable as it once was. This investigation develops guidelines for efficiently...
    Resource Type:
    Dissertation
    Full Text:
    Analysis 36 Network Analysis and Computer Solutions 36 General Loop and Node Equations 38 v -i

  • Compatible field-effect and bipolar transistors

    Creator:
    Cheung, David Kin-Poon
    Abstract:
    Four methods for the simultaneous fabrication of field-effect and bipolar transistors have been investigated. The basic process involves obtaining two different junction depths by a single diffusion. This was accomplished by the techniques of (1) partial masking, (2) two depositions, (3) etched channels, and (4) oxide depletion. The first three...
    Resource Type:
    Masters Thesis
    Full Text:
    ........................... 36 15. Partial- masking Junction Depth Ratio........... 39 16. Partial -masking Surface

  • Field-effect transistor noise at low temperatures

    Creator:
    Spaulding, Richard Alan
    Abstract:
    Low temperature noise measurements on junction field-effect transistors tend to substantiate a theory of low frequency field-effect transistor noise based on the presence of generation centers in the gate-channel depletion region. Measurements of device noise voltage versus temperature reveal pronounced maxima and minima over the temperature range of 300° K...
    Resource Type:
    Masters Thesis
    Full Text:
    = Nc exp ( kT c) 14 the number of electrons in the conduc- tion band when the Fermi level is at Et

  • Determination of sub-nanogram quantities of boron by diffusion in silicon

    Creator:
    Khanna, Satya Pal
    Abstract:
    A technique was investigated in which a silicon crystal was used as a very sensitive detector of sub-nanogram quantities of boron. The unknown quantity of boron was spread uniformly on the surface of an n-type silicon wafer which was then baked for diffusion. The measured depth of the p-n junction...
    Resource Type:
    Dissertation
    Full Text:
    Diffusion in Semiconductors 36 Diffusion of Group III and Group V Elements in Si 41 Rate of Diffusion and

  • Properties of flash-evaporated gallium arsenide and gallium phosphide epitaxial films

    Creator:
    Matsuo, Samuel Seiji
    Abstract:
    The properties of flash- evaporated films of GaAs and GaP were studied in this investigation. Films were grown at various substrate temperatures, source temperatures, source-to-substrate distances and rates of deposition and were evaluated as to their structural, optical and electric properties. It was found that substrate temperature was the major...
    Resource Type:
    Dissertation
    Full Text:
    appreciably different crystal parameters (34, 36). Besides the bulk nature of the substrate, the con

  • Percussion welding force, temperature and time relationships for welding 6061-T6 aluminum

    Creator:
    Eggers, Johannes Lyle
    Abstract:
    The force, temperature, and time relationships were investigated by using oscilloscope measurement techniques. Force was measured using a strain gage and the dynamic response recorded with a polaroid oscilloscope camera. Temperature was measured with a tungsten-rhenium thermocouple and recorded in the same manner. Residual stress measurements were made to determine...
    Resource Type:
    Masters Thesis
    Full Text:
    Measurements. 26 Discussion of Original Drop Shaft Results... 36 Design of Exponential Drop Shaft 40 Results of

  • Vacuum deposition of silicon monoxide for capacitors

    Creator:
    Lo, Joseph Ping Kwan
    Abstract:
    The experimental procedure for evaporating silicon monoxide together with the methods for measuring the film thickness have been investigated. The effects of various process parameters on the rate of deposition, such as source temperature and source-substrate distance, have been studied. The uniformity of silicon monoxide films deposited by this particular...
    Resource Type:
    Masters Thesis
    Full Text:
    chosen to be used in this thesis. A number of investigations has been reported con- cerning the

  • Thermal growth and chemical etching of silicon dioxide film

    Creator:
    Mai, Chao Chen
    Abstract:
    Some important factors that affect the dimensional control of oxide films on silicon were studied. Both N- and P-type silicon with resistivities in the range of 0.014 to 200 ohm-cm and a (111) surface orientation were employed in this experiment. The etching rates of silicon dioxide in hydrofluoric acid (111)...
    Resource Type:
    Masters Thesis
    Full Text:
    ...-.....,................ ... ... ,....,. 36 LIST OF FIGURES Figure Page 1. Oxide thickness versus oxidation time at 1150 °C with

  • The effect of etches on surface recombination in silicon

    Creator:
    Cheng, Dan Sang
    Abstract:
    This thesis presents a limited investigation of the effects of various etches on the surface properties of silicon. Surface recombination velocities of silicon under different etching treatments are compared by using the photoelectromagnetic effect. A measure of the minority carriers lifetime by the photoconductive decay method provides another means of...
    Resource Type:
    Masters Thesis
    Full Text:
    Experimental Results 34 Page 1 2 Page CONCLUSIONS 36 BIBLIOGRAPHY 38 APPENDIX 40 Compositions

  • Variable-width pulse generation using avalanche transistors

    Creator:
    Magnuson, Waldo George
    Abstract:
    The extremely fast ionization process in semiconductors offers a means of generating pulses that have sub -nanosecond rise times and high peak powers. There are several important applications of these pulses which require the duration of the generated pulse to be variable. This thesis investigates three methods of producing variable...
    Resource Type:
    Masters Thesis
    Full Text:
    SUMMARY BIBLIOGRAPHY APPENDICES 29 36 39 41 LIST OF FIGURES Figure Page 1. Current