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Filtering by: Subject Dielectrics Remove constraint Subject: Dielectrics Advisor Looney, James C. Remove constraint Advisor: Looney, James C.

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  • Vacuum deposition of silicon monoxide for capacitors

    Creator:
    Lo, Joseph Ping Kwan
    Abstract:
    The experimental procedure for evaporating silicon monoxide together with the methods for measuring the film thickness have been investigated. The effects of various process parameters on the rate of deposition, such as source temperature and source-substrate distance, have been studied. The uniformity of silicon monoxide films deposited by this particular...
    Resource Type:
    Masters Thesis
    Full Text:
    , breakdown voltage, dielectric constant and leakage resistance have been investigated. Capacitor breakdown

  • Vacuum evaporated dielectrics in MOS structures

    Creator:
    Delzer, Dennis Richard
    Abstract:
    Vacuum evaporated dielectrics for use in MOS structures were studied in this research project. Dielectric films were deposited on substrates by electron bombardment evaporation of sapphire and quartz source materials. These deposited films were studied using infrared spectroscopy, index of refraction, density, and dielectric constant measurements. Etching tests were also...
    Resource Type:
    Dissertation
    Full Text:
    dielectrics for use in MOS struc- tures were studied in this research project. Dielectric films were

  • Space-charge-limited currents in silicon using gold contacts

    Creator:
    Ede, Alan Winthrop
    Abstract:
    The theoretical characteristics of space-charge-limited currents in solids are reviewed, and a survey of suitable dielectric materials and experimental space-charge-limited devices is presented. The properties of the gold-silicon contact as used in space-charge-limited devices were experimentally investigated. It was found that the observed characteristics could be explained on the basis...
    Resource Type:
    Dissertation
    Full Text:
    dielectric materials and experimental space - charge- limited devices is presented. The properties of the