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Filtering by: Creator Moum, James N. Remove constraint Creator: Moum, James N. Advisor Looney, James C. Remove constraint Advisor: Looney, James C.

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  • Percussive-welded p-n junctions in silicon

    Creator:
    Tao, David Ming-Shih
    Abstract:
    This thesis investigates a way to fabricate P-N junctions by percussive welding. The theoretical basis of percussive welding, design considerations of the apparatus used, and the electrical characteristics of the junctions were the main objectives of this investigation. P-type silicon wafers and gold wire doped with arsenic as a N-type...
    Resource Type:
    Masters Thesis
    Full Text:
    Percussive-Welded P-N Junctions in Silicon AN ABSTRACT

  • Hall-effect devices for instructional use

    Creator:
    Dills, Gerald Frederick
    Abstract:
    Problems with Hall devices for instructional use in undergraduate laboratories stimulated this investigation for development of rugged, easily constructed, inexpensive, electrically reproducible Hall devices with high output voltage. Silicon was chosen as the Hall-plate material on the basis of cost and availability. Advantages and disadvantages of various plate shapes, sizes,...
    Resource Type:
    Masters Thesis
    Full Text:
    Electronics Engineering presented on,- n.. ua,4, N 73 (Major) (Date) Title: HALL-EFFECT\ EVICES FOR

  • Determination of sub-nanogram quantities of boron by diffusion in silicon

    Creator:
    Khanna, Satya Pal
    Abstract:
    A technique was investigated in which a silicon crystal was used as a very sensitive detector of sub-nanogram quantities of boron. The unknown quantity of boron was spread uniformly on the surface of an n-type silicon wafer which was then baked for diffusion. The measured depth of the p-n junction...
    Resource Type:
    Dissertation
    Full Text:
    spread uniformly on the surface of an n -type silicon wafer which was then baked for diffusion. The

  • Diffusion of boron and phosphorus in silicon

    Creator:
    Ou, Teh Ming
    Abstract:
    This thesis presents some experimental results for producing controlled PN and NPN diffused structures in silicon by varying the strength of the diffusion sources. Boron diffusions were carried out in a N₂ atmosphere at 1200°C with 10%, 20%, 30% and 40% B₂0₃ in silicic acid as sources. Phosphorus diffusions were...
    Resource Type:
    Masters Thesis
    Full Text:
    goncentration of the boron impurity atoms diffused into an N-type silicon wafer varied from 2. rB x Io17 to. l

  • A complementary MOS random-access-memory cell wth double-diffused MOS transistors

    Creator:
    Tao, David Ming-Shih
    Abstract:
    The use of double-diffused n-type MOS transistor (DN-MOS) in a complementary MOS random-access-memory (CMOS RAM) cell is the main objective of this investigation. DN-MOS transistors and conventional p-channel MOS transistors on the same chip have been successfully fabricated. Process sequence effects on device threshold voltage and channel length are discussed....
    Resource Type:
    Dissertation
    Full Text:
    Abstract approved: Redacted for privacy 7' James C. Looney r. LJ The use of double-diffused n-type MOS

  • Vacuum-deposited aluminum-oxide MOS transistors

    Creator:
    Hwang, Yun-sheng
    Abstract:
    The properties of evaporated aluminum-oxide films were investigated. The characteristics of MOS devices made with single-layer aluminum-oxide films and double-layer films which were made by evaporating aluminum oxide over thermally-grown silicon dioxide as gate insulation have been investigated. Vacuum-evaporated aluminum oxide has features which are suitable for fabricating MOS devices....
    Resource Type:
    Masters Thesis
    Full Text:
    TRANSISTORS Abstract approved: James C. Looney The properties of evaporated aluminum-oxide films Redacted

  • Field-effect transistor noise at low temperatures

    Creator:
    Spaulding, Richard Alan
    Abstract:
    Low temperature noise measurements on junction field-effect transistors tend to substantiate a theory of low frequency field-effect transistor noise based on the presence of generation centers in the gate-channel depletion region. Measurements of device noise voltage versus temperature reveal pronounced maxima and minima over the temperature range of 300° K...
    Resource Type:
    Masters Thesis
    Full Text:
    LOW TEMPERATURES Abstract approved: Redacted for privacy Pr;o-fessor James C Looney Low temperature

  • Influence of surface fields on shallow planar-junction breakdown voltages

    Creator:
    Kim, Sŭng-yŏng
    Abstract:
    The influence of surface fields on the breakdown voltage is studied experimentally for p⁺-n silicon diodes with a junction depth of 0.5μ in order to improve the curvature- limited breakdown of the diffused, shallow-collector junction of a microwave transistor. Devices with a gap in the gate metal electrode are also...
    Resource Type:
    Masters Thesis
    Full Text:
    SHALLOW PLANAR JUNCTION BREAKDOWN VOLTAC4ES Redacted for Privacy Abstract approved: James C. fodhey -A

  • Thermal growth and chemical etching of silicon dioxide film

    Creator:
    Mai, Chao Chen
    Abstract:
    Some important factors that affect the dimensional control of oxide films on silicon were studied. Both N- and P-type silicon with resistivities in the range of 0.014 to 200 ohm-cm and a (111) surface orientation were employed in this experiment. The etching rates of silicon dioxide in hydrofluoric acid (111)...
    Resource Type:
    Masters Thesis
    Full Text:
    control of oxide films on silicon were studied. Both N- and P -type silicon with resistivities in the

  • Microwave methods of measuring resistivity of gallium arsenide

    Creator:
    Quinn, Alexander C.
    Abstract:
    This paper is concerned with the determination of gallium arsenide resistivity by measurement of attenuation of microwave energy at 7500 megacycles transmitted through a slice. The first section of this paper describes gallium arsenide properties as compared to silicon, germanium, silicon carbide, and diamond. A description is then given of...
    Resource Type:
    Masters Thesis
    Full Text:
    feasible to measure the resistivity of "N" and "P" type gallium arsenide, of both the single and