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  • Radiation effects in compound semiconductor heterostructure devices

    Creator:
    Sarkar, Aveek, 1974-
    Abstract:
    Radiation studies were performed on compound semiconductor heterostructure devices. The objective was to understand the degradation processes caused by the exposure of these devices to radiation. Preliminary experiments were focussed on studying the degradation phenomenon in single heterojunctions and single quantum wells. It was found that ionizing radiation like gamma...
    Resource Type:
    Masters Thesis
    Full Text:
    exposure of these devices to radiation. Preliminary experiments were focussed on studying the degradation

  • Radiation effects in III-V heterojunction bipolar transistors

    Creator:
    Vuppala, Soujanya
    Abstract:
    Electron and neutron irradiation effects in InGaP/GaAs single heterojunction bipolar transistors are investigated in this thesis. Devices with different emitter sizes and grown by two different growth techniques were examined. Based on the physics of heterojunction bipolar transistors and concepts of radiation damage mechanisms, the irradiation effects were analyzed. The...
    Resource Type:
    Masters Thesis
    Full Text:
    and act mainly on the bulk of the device whereas the effect of ionizing radiation is mostly surface

  • Radiation effects on III-V heterostructure devices

    Creator:
    Jun, Bongim
    Abstract:
    The neutron and electron radiation effects in Ill-V compound semiconductor heterostructure devices are studied in this thesis. Three types of devices investigated are AlGaAs/GaAs high electron mobility transistors (HEMTs), AlGaAs/InGaAs/GaAs heterostructure insulated gate field effect transistors (HIGFETs), and InP/InCaAs/InGaAs single heterojunction bipolar transistors (SHBTs). HEMTs and HIGFETs are primarily investigated...
    Resource Type:
    Dissertation
    Full Text:
    Doctor of Philosophy in Physics presented on July 1, 2002. Title: Radiation Effects on Ill-V

  • Radiation effects in III-V compound semiconductor heterostructure devices

    Creator:
    Li, ChyiShiun
    Abstract:
    The radiation effects in III-V heterojunction devices are investigated in this thesis. Two types of heterojunction devices studied are InGaP/GaAs single heterojunction bipolar transistors (SHBTs) and GaN-based heterojunction light emitting diodes (LEDs). InGaP/GaAS HBTs are investigated for high energy (67 and 105 MeV) proton irradiation effects while GaN heterojunction LEDs...
    Resource Type:
    Masters Thesis
    Full Text:
    pronounced radiation effect shown in SHBTs is gain degradation. Dis- placement damage in the bulk of base