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Filtering by: Advisor Vechten, James A. Van Advisor van Vechten, James A.

Monte Carlo simulation of atomic diffusion in Si and GaAs via vacancies and interstitials

Creator:

Schmid, Uwe

Abstract:

A computer simulation program, which runs efficiently on micro-computers, for the diffusion of point defects in the diamond and zincblende structure was developed. The simulated point defects comprise vacancies, host or impurity interstitials on any of three types of interstitials sites, and impurities. Diffusion via vacancy first and second neighbor...

Resource Type:

Masters Thesis

Full Text:

"Ballistic Model" (Van Vechten, 1975) 13-18, this 16 is the threshold for the hop into a given zone
Fundamental studies of atomic diffusion by computer simulation of atomic processes on the giga event scale and multiple PC's in parallel

Creator:

Zhang, Qiongshan

Abstract:

The classic treatment of diffusion by Einstein and by Chandrasekhar assumed conservative boundary conditions; mobile species were neither created nor destroyed on the sample surface. It is normal to assume that vacancies and host interstitials are created and annihilated on incoherent interfaces or free surfaces; i.e., these are assumed to...

Resource Type:

Masters Thesis

Full Text:

:_ James A. Van Vechten The classic treatment of diffusion by Einstein and by Chandrasekhar assumed
An examination of point defects and atomic diffusion in silicon

Creator:

Monson, Tyrus K.

Abstract:

The self-interstitial defect is commonly regarded as important in regulating diffusion in silicon. A review of the literature reveals that the scientific bases for invoking the self-interstitial defect are weak, while an alternate defect, the vacancy cluster, has been largely ignored. One argument which has been used to establish dominance...

Resource Type:

Dissertation

Full Text:

Diffusion in Silicon. Abstract approved: James A. Van Vechten The self-interstitial defect is commonly