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Filtering by: Alternative title ssim Technical note no. F-21 Remove constraint Alternative title ssim: Technical note no. F-21 Advisor Wager, John F. Remove constraint Advisor: Wager, John F. Decade 2010-2019 Remove constraint Decade: 2010-2019

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  • Amorphous metal thin films as a platform for solution processing

    Creator:
    Landau, Nicholas P.
    Abstract:
    The research presented herein represents an effort to combine the ultra-smooth surface of an amorphous metal thin film (AMTF) with a solution-processed dielectric synthesized via prompt inorganic condensation (PIC). Analysis of dielectric film quality is carried out via electrical measurements of metal-insulator-metal (MIM) diodes. Anneals at 500 and 700 °C...
    Resource Type:
    Masters Thesis
    Full Text:
    Science in Electrical and Computer Engineering presented on August 21, 2014. Title: Amorphous Metal Thin

  • DC/AC Stability of In-Ga-Zn-O Thin-Film Transistors

    Creator:
    Zhou, Fan
    Abstract:
    The electrical stability of amorphous indium-gallium-zinc oxide (a-IGZO) thinfilmtransistors (TFTs) is investigated for flat-panel display applications. Althoughproducts incorporating a-IGZO TFT backplanes are already commercially available,e.g., iMac with 5K retina display, technical challenges need to be addressed for nextgenerationapplications, e.g., active-matrix organic light-emitting diode displays.Device stability is one crucial issue. The...
    Resource Type:
    Dissertation
    Full Text:
    Transistors Abstract approved: ______________________________________________________ John F

  • Thermally-stable amorphous metal thin films

    Creator:
    McGlone, John M.
    Abstract:
    Amorphous metal thin films (AMTFs) are of potential use for metal-insulator-metal (MIM) tunnel diode applications due to their ultra-smooth surfaces, a consequence of their amorphous microstructure. The objective of this thesis is to design a thermally-stable AMTF capable of maintaining MIM tunnel diode performance after a post-deposition anneal in excess...
    Resource Type:
    Masters Thesis
    Full Text:
    : Thermally-Stable Amorphous Metal Thin Films. Abstract approved: John F. Wager Amorphous metal thin films

  • Investigation of ultra-thin In-Ga-Zn-O thin-film transistors

    Creator:
    Chiang, Tsung-Han
    Abstract:
    The objective of the work reported herein is to explore the impact of decreasing channel thickness on radio-frequency (RF) sputtered amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) electrical performance through the evaluation of drain current versus gate voltage (I[subscript D] − V[subscript G]) transfer curves. For a fixed set of...
    Resource Type:
    Masters Thesis
    Full Text:
    : Investigation of Ultra-thin In-Ga-Zn-O Thin-Film Transistors Abstract approved: John F. Wager The objective

  • Electronic Conduction Mechanisms in Insulators

    Creator:
    Chiang, Tsung-Han
    Abstract:
    The research presented herein focuses on electrical assessment of oxide thin films as insulators. The current density-electric field (J-E) characteristics of four insulators of dramatically different electrical quality are assessed in terms of their operative electronic conduction mechanisms. Conduction in the two high-quality insulators is dominated by Ohmic conduction and...
    Resource Type:
    Dissertation
    Full Text:
    . Title: Electronic Conduction Mechanisms in Insulators Abstract approved: John F. Wager The research

  • Fabrication process assessment and negative bias illumination stress study of IGZO and ZTO TFTs

    Creator:
    Hoshino, Ken
    Abstract:
    Indium-gallium-zinc oxide (IGZO) and zinc-tin oxide (ZTO) are investigated for thin-film transistor (TFT) applications. Negative bias illumination stress (NBIS) is employed for electrical stability assessment. Unpassivated IGZO and ZTO TFTs suffer from severe NBIS instabilities. Zinc-tin-silicon oxide is found to be an effective passivation layer for IGZO and ZTO TFTs,...
    Resource Type:
    Dissertation
    Full Text:
    n-type substrate and a dopant density of ! 4 "10 15 cm-3. Note that there is no weak

  • Assessment of High Mobility Oxide Thin-Film Transistors

    Creator:
    Stewart, Kevin A.
    Abstract:
    The trend towards higher resolution, faster refresh rate active-matrix liquid-crystal displays (AMLCDs) as well as the emergence of active-matrix organic light-emitting diode (AMOLED) displays is driving the demand for amorphous oxide semiconductor thin-film transistors (AOS TFTs) with higher mobility. A physics-based model for carrier transport in an amorphous semiconductor is...
    Resource Type:
    Dissertation
    Full Text:
    , 2017. Title: Assessment of High Mobility Oxide Thin-Film Transistors Abstract approved: John F

  • Atomic solid state energy scale applied to novel thin-film solar absorbers

    Creator:
    Pelatt, Brian D.
    Abstract:
    The atomic solid state energy (SSE) scale is introduced as a tool for inorganic materials design. The SSE scale is obtained by assessing an average electron affinity (EA) (for a cation) or an average ionization potential (IP) (for an anion) for each atom using data from compounds having that specific...
    Resource Type:
    Dissertation
    Full Text:
    : Atomic Solid State Energy Scale Applied to Novel Thin-Film Solar Absorbers Abstract approved: John F

  • Development of Amorphous Metal Thin Films for Thermal Inkjet Printing and Microelectronics

    Creator:
    McGlone, John M.
    Abstract:
    Due to a lack of grain boundaries, an amorphous metal thin film (AMTF) possesses advantageous mechanical properties and enhanced chemical stability that is potentially useful for thermal inkjet (TIJ) printing applications. The use of an AMTF as a TIJ resistor or cavitation plate could lead to a thinner TIJ cavitation...
    Resource Type:
    Dissertation
    Full Text:
    . Abstract approved: John F. Wager Due to a lack of grain boundaries, an amorphous metal thin film (AMTF

  • Al-In-Sn-O thin-film transistors

    Creator:
    Stewart, Kevin A.
    Abstract:
    The aim of the research undertaken for this thesis was to develop a new high-performance amorphous oxide semiconductor (AOS) for use as a channel layer in a thin-film transistor (TFT). AOS TFTs offer higher electron mobility than the established amorphous silicon based technology. A new channel material comprised of aluminum...
    Resource Type:
    Masters Thesis
    Full Text:
    presented on February 13, 2015. Title: Al-In-Sn-O Thin-Film Transistors Abstract approved: John F