Index Catalog // ScholarsArchive@OSU

A study of deep levels of AlGaAs/GaAs heterojunction bipolar transistors

Creator:: Huang, Chun-ta
Abstract:: A study of deep levels of the emitter region of a heterojunction bipolar transistor is investigated using deep level transient spectroscopy (DLTS), deep level admittance spectroscopy (DLAS), thermally stimulated capacitance (TSCAP), and capacitance-voltage (C-V) profiling. The DX center, with an activation energy of 0.45 eV, is the only deep level...
Resource Type:: Masters Thesis
Full Text:: r L X E4 Shallow Level Forbidden Deep Transitions Level k Valence Band Figure 2.5. A

Hot carrier degradation of sub-micron n-channel MOSFETs subject to static stress

Creator:: Aminzadeh, Payman G.
Abstract:: Hot carrier effects in sub-micron lightly doped drain (LDD) n-channel MOSFETs under static (DC) stress are studied in order to establish the degradation mechanisms of such devices. Degradation is monitored as a function of time at various gate voltages. Under accelerated aging conditions (i.e. large drain voltages) the gate voltage...
Resource Type:: Masters Thesis
Full Text:: Ammeter r Controller GPIB Figure 3-9. A block diagram for the charge pumping setup (lateral profile of

Electrical characterization of n-type aluminum gallium arsenide

Creator:: Kim, Seung-bae
Resource Type:: Dissertation
Full Text:: . J. T. Owen, Professor J. A. Arthur, and Professor J. R. Welty for being on my graduate committee

Development and characterization of AlInN as an alternating-current thin-film electroluminescent display phosphor

Creator:: Mueller, Matthew R.
Resource Type:: Masters Thesis
Full Text:: .) The resistance R is given by Ohm's Law, R.I (3 - 2) where V is the voltage required to produce a 1 MV

ACTFEL phosphor deposition by RF sputtering

Creator:: Ang, Wie Ming
Resource Type:: Masters Thesis
Full Text:: Privacy Abstract approved: Dr. John F. W ger In this thesis, a research program with the goal of

Al-In-Sn-O thin-film transistors

Creator:: Stewart, Kevin A.
Abstract:: The aim of the research undertaken for this thesis was to develop a new high-performance amorphous oxide semiconductor (AOS) for use as a channel layer in a thin-film transistor (TFT). AOS TFTs offer higher electron mobility than the established amorphous silicon based technology. A new channel material comprised of aluminum...
Resource Type:: Masters Thesis
Full Text:: THESIS OF Kevin A. Stewart for the degree of Master of Science in Electrical and Computer Engineering

Assessment of High Mobility Oxide Thin-Film Transistors

Creator:: Stewart, Kevin A.
Abstract:: The trend towards higher resolution, faster refresh rate active-matrix liquid-crystal displays (AMLCDs) as well as the emergence of active-matrix organic light-emitting diode (AMOLED) displays is driving the demand for amorphous oxide semiconductor thin-film transistors (AOS TFTs) with higher mobility. A physics-based model for carrier transport in an amorphous semiconductor is...
Resource Type:: Dissertation
Full Text:: AN ABSTRACT OF THE DISSERTATION OF Kevin A. Stewart for

Alternating-current thin-film electroluminescent device physics and modeling

Creator:: Douglas, Allan A.
Abstract:: Alternating-current thin-film electroluminescent (ACTFEL) devices are used in the formation of pixels in flat panel displays. ACTFEL flat panel displays have many advantages over other flat panel technologies. Specifically, ACTFEL panels are emissive displays, they have high brightness, wide viewing angles, and rugged construction. Although much is already known about...
Resource Type:: Masters Thesis
Full Text:: . Thus, a slow decay in the phosphor voltage (phosphor field) is R. Ito V Ext Figure 3-7

Internal charge-phosphor field analysis, electrical characterization, and aging studies of AC thin-film electroluminescent devices

Creator:: Abu-Dayah, Ahmad I.
Resource Type:: Masters Thesis
Full Text:: primary accomplishments are presented in this thesis. First, a new method developed to electrically

Development of high efficiency solar absorbers

Creator:: Ravichandran, Ram
Abstract:: Current cadmium telluride and copper indium gallium diselenide thin-film solar cells (TFSCs) utilize thick absorbers (2 - 4 μm). For efficient carrier extraction in these TFSCs, the absorber layer requires high carrier mobilities and a long minority carrier lifetime, which necessitates the use of a high purity, defect-free thin film....
Resource Type:: Dissertation
Full Text:: and a long minority carrier lifetime, which necessitates the use of a high purity, defect-free thin

ScholarsArchive@OSU

A study of deep levels of AlGaAs/GaAs heterojunction bipolar transistors

Hot carrier degradation of sub-micron n-channel MOSFETs subject to static stress

Electrical characterization of n-type aluminum gallium arsenide

Development and characterization of AlInN as an alternating-current thin-film electroluminescent display phosphor

ACTFEL phosphor deposition by RF sputtering

Al-In-Sn-O thin-film transistors

Assessment of High Mobility Oxide Thin-Film Transistors

Alternating-current thin-film electroluminescent device physics and modeling

Internal charge-phosphor field analysis, electrical characterization, and aging studies of AC thin-film electroluminescent devices

Development of high efficiency solar absorbers

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