Index Catalog // ScholarsArchive@OSU

Development and characterization of AlInN as an alternating-current thin-film electroluminescent display phosphor

Creator:: Mueller, Matthew R.
Resource Type:: Masters Thesis
Full Text:: AN ABSTRACT OF THE IliESIS OF Matthew R. Mueller for the degree

Physical vapor deposition of novel thin-film solar absorbers

Creator:: Waters, Benjamin E.
Abstract:: Current leading thin-film solar cell technologies, i.e., cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS), employ elements which are either toxic (Cd), or rare and/or expensive (In, Te, Ga, and Cd). The aim of this thesis is to investigate new, abundant, non-toxic p-type semiconductors for potential solar absorber application....
Resource Type:: Masters Thesis
Full Text:: AN ABSTRACT OF THE THESIS OF Benjamin E. Waters for the

Transparent electronics : thin-film transistors and integrated circuits

Creator:: Presley, Rick E.
Abstract:: This thesis focuses on two aspects of transparent electronics, SnO₂ transparent thin-film transistors (TTFTs) and transparent circuits. Both depletion- and enhancement-mode SnO₂ TTFTs are realized. The maximum effective mobility for the depletion- and enhancement-mode devices are 2 cm²V⁻¹s⁻¹ and 0.8 cm²V⁻¹s⁻¹, respectively. A variety of techniques to decrease the carrier...
Resource Type:: Masters Thesis
Full Text:: thesis.dvi AN ABSTRACT OF THE THESIS OF Rick E. Presley for the degree

ACTFEL phosphor deposition by RF sputtering

Creator:: Ang, Wie Ming
Resource Type:: Masters Thesis
Full Text:: Deposition by RF Sputtering by e Ming An A THESIS submitted to Oregon State University in partial

A study of deep levels of AlGaAs/GaAs heterojunction bipolar transistors

Creator:: Huang, Chun-ta
Abstract:: A study of deep levels of the emitter region of a heterojunction bipolar transistor is investigated using deep level transient spectroscopy (DLTS), deep level admittance spectroscopy (DLAS), thermally stimulated capacitance (TSCAP), and capacitance-voltage (C-V) profiling. The DX center, with an activation energy of 0.45 eV, is the only deep level...
Resource Type:: Masters Thesis
Full Text:: constant.Taking the logarithm of eqn. (3.2) yields, )In e = ( 1,r + In ( a Vth Nc ) (3.3) Also, trap

Electrical characterization of n-type aluminum gallium arsenide

Creator:: Kim, Seung-bae
Resource Type:: Dissertation
Full Text:: . J. T. Owen, Professor J. A. Arthur, and Professor J. R. Welty for being on my graduate committee

Hot carrier degradation of sub-micron n-channel MOSFETs subject to static stress

Creator:: Aminzadeh, Payman G.
Abstract:: Hot carrier effects in sub-micron lightly doped drain (LDD) n-channel MOSFETs under static (DC) stress are studied in order to establish the degradation mechanisms of such devices. Degradation is monitored as a function of time at various gate voltages. Under accelerated aging conditions (i.e. large drain voltages) the gate voltage...
Resource Type:: Masters Thesis
Full Text:: , Figure (accumulation). 0.25 0.2 0.15 R 0.1 0.05 0 7 -= -: %Id versus Stress Time e ii A AA A

Design, fabrication, and testing of inhomogeneous dielectrics

Creator:: Lim, Sungkyoo
Abstract:: In this thesis the concept of inhomogeneous dielectrics is demonstrated for various optical coating applications. Compositionally-varying silicon oxynitride (SiON) dielectric layers, with the refractive index varying as a function of position, are grown by computer-controlled plasma-enhanced chemical vapor deposition (PECVD) using silane, nitrogen, and nitrous oxide reactant gases. Compositionally graded...
Resource Type:: Dissertation
Full Text:: as R = E P and R = (reflected) Es (reflected) Ep (incident) Es (incident) (3.2) 40 Rp and R5

Discrete trap modeling of thin-film transistors

Creator:: Yerubandi, Ganesh Chakravarthy
Abstract:: A discrete trap model is developed and employed for elucidation of thin-film transistor (TFT) device physics trends. An attractive feature of this model is that only two model parameters are required, the trap energy depth, E[subscript T], and the trap density, N[subscript T]. The most relevant trends occur when E[subscript...
Resource Type:: Masters Thesis
Full Text:: . n1 is given by ⎟⎟ ⎠ ⎞ ⎜⎜ ⎝ ⎛ − = Tk E c B T eNn1 , (3.1) where Nc is the

Amorphous oxide semiconductors in circuit applications

Creator:: McFarlane, Brian Ross
Abstract:: The focus of this thesis is the investigation of thin-film transistors (TFTs) based on amorphous oxide semiconductors (AOSs) in two circuit applications. To date, circuits implemented with AOS-based TFTs have been primarily enhancement-enhancement inverters, ring oscillators based on these inverters operating at peak frequencies up to ~400 kHz, and two-transistor...
Resource Type:: Masters Thesis
Full Text:: enhancement-depletion (E-D) inverter based on heterogeneous channel materials. Simulation results using

ScholarsArchive@OSU

Development and characterization of AlInN as an alternating-current thin-film electroluminescent display phosphor

Physical vapor deposition of novel thin-film solar absorbers

Transparent electronics : thin-film transistors and integrated circuits

ACTFEL phosphor deposition by RF sputtering

A study of deep levels of AlGaAs/GaAs heterojunction bipolar transistors

Electrical characterization of n-type aluminum gallium arsenide

Hot carrier degradation of sub-micron n-channel MOSFETs subject to static stress

Design, fabrication, and testing of inhomogeneous dielectrics

Discrete trap modeling of thin-film transistors

Amorphous oxide semiconductors in circuit applications

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