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Filtering by: Alternative title ssim EC 600 Remove constraint Alternative title ssim: EC 600 Advisor Wager, John F. Remove constraint Advisor: Wager, John F. Degree Level Master's Remove constraint Degree Level: Master's

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  • Ferroelectric thin film development

    Creator:
    Harman, Taran V.
    Abstract:
    The long-term goal of the research project initiated with this thesis is the development of lead-free, fully-transparent ferroelectric devices, such as ferroelectric capacitors or ferroelectric-gate field-effect transistors. Ferroelectric materials exhibit spontaneous polarization with the application of an external electric field, which is persistent upon removal of the applied field, and...
    Resource Type:
    Masters Thesis
    Full Text:
    exhibit dielectric constants in the range of ∼300-600, typical of a ferroelectric film. However, all

  • Contact resistance and stability assessment of oxide-based thin film transistors

    Creator:
    Hung, Celia M.
    Abstract:
    This thesis focuses on two aspects of oxide-based thin-film transistors (TFTs), contact resistance and instability assessment. First, determination of the contact resistance of indium tin oxide (ITO) on two wide-band gap semiconductors, zinc oxide (ZnO) and indium gallium oxide (IGO), is attempted and the effects of contact resistance on device...
    Resource Type:
    Masters Thesis
    Full Text:
    after post-deposition annealing at a temperature of ~ 600 °C for ZnO and IGO TFTs, and ~ 400 °C for

  • Process development and modeling of thin-film transistors

    Creator:
    Hong, David
    Abstract:
    A class of high-performance thin-film transistor (TFT) channel materials has emerged involving oxides composed of heavy-metal cations (HMCs) with (n-1)d¹⁰ns⁰ (n≥4) electronic configurations. This thesis is devoted to the pursuit of three topics involving the development of these materials for TFT applications: modeling TFT currentvoltage characteristics, an exploratory method for...
    Resource Type:
    Masters Thesis
    Full Text:
    channel layer is annealed in air at 600° C. This device is unpassivated. VGS is decreased from 40 V (top

  • Transparent electronics : thin-film transistors and integrated circuits

    Creator:
    Presley, Rick E.
    Abstract:
    This thesis focuses on two aspects of transparent electronics, SnO₂ transparent thin-film transistors (TTFTs) and transparent circuits. Both depletion- and enhancement-mode SnO₂ TTFTs are realized. The maximum effective mobility for the depletion- and enhancement-mode devices are 2 cm²V⁻¹s⁻¹ and 0.8 cm²V⁻¹s⁻¹, respectively. A variety of techniques to decrease the carrier...
    Resource Type:
    Masters Thesis
    Full Text:
    600 ◦C. The channel length and width are 1524 µm and 7620 µm, respectively. VGS is decreased from 40

  • Characterization of alternating-current thin-film SrS:Ce electroluminescent devices

    Creator:
    Thuemler, Robert L.
    Resource Type:
    Masters Thesis
    Full Text:
    , 60:600, 70:700. 49 5.9 Arrhenius plots of the peaks seen in the rate-window curves from Fig. 5.8 for

  • Development of zinc tin oxide-based transparent thin-film transistors

    Creator:
    Chiang, Hai Q.
    Abstract:
    The focus of this thesis involves development of highly transparent, n-channel, accumulation- mode thin-film transistors employing a zinc tin oxide (ZTO) channel layer. ZTO-based transparent thin-film transistors (TTFTs) show improved device performance compared to ZnO-based TTFTs. An estimated peak effective mobility for these devices as high as ~100 cm² V⁻¹sec⁻¹...
    Resource Type:
    Masters Thesis
    Full Text:
    dependence of trap states has been neglected when determining S, IV (cm3eV'), and A (cm2V'). Ec EF Ev

  • Development, fabrication, and characterization of transparent electronic devices

    Creator:
    Hoffman, Randy L.
    Abstract:
    The objective of this thesis is to provide an initial demonstration of the feasibility of constructing highly transparent active electronic devices. Such a demonstration is successfully achieved in the fabrication of ZnO-based thin film transistors (TFTs) exhibiting transparency greater than ~90% in the visible portion of the electromagnetic spectrum and...
    Resource Type:
    Masters Thesis
    Full Text:
    are employed to calculate (Ec EF)B, so that the Xi = 0 eV curve is not strictly accurate near the

  • ACTFEL phosphor deposition by RF sputtering

    Creator:
    Ang, Wie Ming
    Resource Type:
    Masters Thesis
    Full Text:
    Phosphor Ec Metal ITO Figure 6. An energy band diagram of an ideal ACII-EL device in equilibrium

  • p-type transparent electronics

    Creator:
    Valencia, Melinda Marie
    Abstract:
    The objective of this thesis is to contribute to the development of p-type materials for transparent electronics applications. Thin films of ®-BaCu2S2, a p-type semi-transparent semiconductor, are fabricated and characterized. ®-BaCu2S2 has a transmittance of 60% to 80 % in the visible portion of the electromagnetic spectrum. The mobility, conductivity,...
    Resource Type:
    Masters Thesis
    Full Text:
    0 0 0 0 1 1 1 1 2 2 2 2 3 3 3 3 Gate ChannelInsulator (b) EC EFEV Gate Insulator Channel (a

  • Amorphous oxide semiconductors in circuit applications

    Creator:
    McFarlane, Brian Ross
    Abstract:
    The focus of this thesis is the investigation of thin-film transistors (TFTs) based on amorphous oxide semiconductors (AOSs) in two circuit applications. To date, circuits implemented with AOS-based TFTs have been primarily enhancement-enhancement inverters, ring oscillators based on these inverters operating at peak frequencies up to ~400 kHz, and two-transistor...
    Resource Type:
    Masters Thesis
    Full Text:
    Metal Ins. Semiconductor Ec EF EV Ec EF EV Ec EF EV (a) (b) (c) Figure 2.2: Energy band diagrams