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Filtering by: Alternative title ssim Technical note no. 151 Remove constraint Alternative title ssim: Technical note no. 151 Advisor Wager, John F. Remove constraint Advisor: Wager, John F. Degree Level Master's Remove constraint Degree Level: Master's

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  • Amorphous oxide semiconductors in circuit applications

    Creator:
    McFarlane, Brian Ross
    Abstract:
    The focus of this thesis is the investigation of thin-film transistors (TFTs) based on amorphous oxide semiconductors (AOSs) in two circuit applications. To date, circuits implemented with AOS-based TFTs have been primarily enhancement-enhancement inverters, ring oscillators based on these inverters operating at peak frequencies up to ~400 kHz, and two-transistor...
    Resource Type:
    Masters Thesis
    Full Text:
    integrated IZO-based TFTs fabricated to date are found to be conductive and exhibit no gate modulation

  • Instability and temperature-dependence assessment of IGZO TFTs

    Creator:
    Hoshino, Ken
    Abstract:
    Amorphous oxide semiconductors (AOSs) are of great current interest for thin-film transistor (TFT) channel layer applications. In particular, indium gallium zinc oxide (IGZO) is under intense development for commercial applications because of its demonstrated high performance at low processing temperatures. The objective of the research presented in this thesis is...
    Resource Type:
    Masters Thesis
    Full Text:
    -type substrate and a dopant density of ! 4 "10 15 cm-3. Note that there is no weak accumulation

  • Development of zinc tin oxide-based transparent thin-film transistors

    Creator:
    Chiang, Hai Q.
    Abstract:
    The focus of this thesis involves development of highly transparent, n-channel, accumulation- mode thin-film transistors employing a zinc tin oxide (ZTO) channel layer. ZTO-based transparent thin-film transistors (TTFTs) show improved device performance compared to ZnO-based TTFTs. An estimated peak effective mobility for these devices as high as ~100 cm² V⁻¹sec⁻¹...
    Resource Type:
    Masters Thesis
    Full Text:
    addition, the outstanding technical staff at OSU have made considerable contri- butions. If it were not

  • Characterization of alternating-current thin-film SrS:Ce electroluminescent devices

    Creator:
    Thuemler, Robert L.
    Resource Type:
    Masters Thesis
    Full Text:
    exhibit no dynamic space charge. The exact nature of native defects in SrS:Ce ACTFEL devices is not well

  • Alternating-current thin-film electroluminescent device physics and modeling

    Creator:
    Douglas, Allan A.
    Abstract:
    Alternating-current thin-film electroluminescent (ACTFEL) devices are used in the formation of pixels in flat panel displays. ACTFEL flat panel displays have many advantages over other flat panel technologies. Specifically, ACTFEL panels are emissive displays, they have high brightness, wide viewing angles, and rugged construction. Although much is already known about...
    Resource Type:
    Masters Thesis
    Full Text:
    typical C-V curve. 12 Furthermore, note that these calculations assume that there is no spatial

  • Development, fabrication, and characterization of transparent electronic devices

    Creator:
    Hoffman, Randy L.
    Abstract:
    The objective of this thesis is to provide an initial demonstration of the feasibility of constructing highly transparent active electronic devices. Such a demonstration is successfully achieved in the fabrication of ZnO-based thin film transistors (TFTs) exhibiting transparency greater than ~90% in the visible portion of the electromagnetic spectrum and...
    Resource Type:
    Masters Thesis
    Full Text:
    (b) for an ideal inter- face (i.e. no interfacial dipole or fixed charge). Note that the insula- tor

  • ACTFEL phosphor deposition by RF sputtering

    Creator:
    Ang, Wie Ming
    Resource Type:
    Masters Thesis
    Full Text:
    to Jim Krebs, Chuck Meitt le, Art Nee ley, and Leon Ungier for their technical assistance without

  • Investigation of ultra-thin In-Ga-Zn-O thin-film transistors

    Creator:
    Chiang, Tsung-Han
    Abstract:
    The objective of the work reported herein is to explore the impact of decreasing channel thickness on radio-frequency (RF) sputtered amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) electrical performance through the evaluation of drain current versus gate voltage (I[subscript D] − V[subscript G]) transfer curves. For a fixed set of...
    Resource Type:
    Masters Thesis
    Full Text:
    a graduate student and researcher. I am grateful for his patience with my technical writing

  • A study of deep levels of AlGaAs/GaAs heterojunction bipolar transistors

    Creator:
    Huang, Chun-ta
    Abstract:
    A study of deep levels of the emitter region of a heterojunction bipolar transistor is investigated using deep level transient spectroscopy (DLTS), deep level admittance spectroscopy (DLAS), thermally stimulated capacitance (TSCAP), and capacitance-voltage (C-V) profiling. The DX center, with an activation energy of 0.45 eV, is the only deep level...
    Resource Type:
    Masters Thesis
    Full Text:
    0.0 0.2 0.4 0.6 0.8 1.0 Equiv. Al Mole Fraction, x no applied pressure D x=0.19, P=7.1, 10.6

  • Modeling and development of p-type thin-film transistors

    Creator:
    Spiegelberg, Matthew Craig
    Abstract:
    The primary focus of this thesis involves modeling and development of p-type thin-film transistors (p-TFTs), moving towards the realization of a filly transparent thin-film transistor (TTFT). The modeling portion of this thesis emphasizes the development of physics-based TFT models, specifically focusing on the elucidation of non-ideal current-voltage characteristic behavior. A...
    Resource Type:
    Masters Thesis
    Full Text:
    Laboratory under grant number XAT-4-33624-11, the U.S. National Science Foundation under grant no. DMR