Index Catalog // ScholarsArchive@OSU

Thin-film transistors with amorphous oxide channel layers

Creator:: Grover, Manan S.
Abstract:: In recent years, a new class of high-performance thin-film transistors (TFTs) has emerged comprising amorphous oxide channel materials composed of heavy-metal cations (HMCs) with (n-1)d¹⁰ns⁰ (n ≥ 4, where 'n' refers to the row of the periodic table) electronic configuration. This thesis is devoted to the fabrication and characterization of...
Resource Type:: Masters Thesis

Al-In-Sn-O thin-film transistors

Creator:: Stewart, Kevin A.
Abstract:: The aim of the research undertaken for this thesis was to develop a new high-performance amorphous oxide semiconductor (AOS) for use as a channel layer in a thin-film transistor (TFT). AOS TFTs offer higher electron mobility than the established amorphous silicon based technology. A new channel material comprised of aluminum...
Resource Type:: Masters Thesis
Full Text:: THESIS OF Kevin A. Stewart for the degree of Master of Science in Electrical and Computer Engineering

Investigation of ultra-thin In-Ga-Zn-O thin-film transistors

Creator:: Chiang, Tsung-Han
Abstract:: The objective of the work reported herein is to explore the impact of decreasing channel thickness on radio-frequency (RF) sputtered amorphous indium-gallium-zinc oxide (a-IGZO) thin-ﬁlm transistors (TFTs) electrical performance through the evaluation of drain current versus gate voltage (I[subscript D] − V[subscript G]) transfer curves. For a ﬁxed set of...
Resource Type:: Masters Thesis
Full Text:: Review This chapter reviews previously reported work in relation to a-IGZO TFTs. Sec- ondly, TFT

Amorphous metal thin films as a platform for solution processing

Creator:: Landau, Nicholas P.
Abstract:: The research presented herein represents an effort to combine the ultra-smooth surface of an amorphous metal thin ﬁlm (AMTF) with a solution-processed dielectric synthesized via prompt inorganic condensation (PIC). Analysis of dielectric ﬁlm quality is carried out via electrical measurements of metal-insulator-metal (MIM) diodes. Anneals at 500 and 700 °C...
Resource Type:: Masters Thesis
Full Text:: Science in Electrical and Computer Engineering presented on August 21, 2014. Title: Amorphous Metal Thin

Thermally-stable amorphous metal thin films

Creator:: McGlone, John M.
Abstract:: Amorphous metal thin films (AMTFs) are of potential use for metal-insulator-metal (MIM) tunnel diode applications due to their ultra-smooth surfaces, a consequence of their amorphous microstructure. The objective of this thesis is to design a thermally-stable AMTF capable of maintaining MIM tunnel diode performance after a post-deposition anneal in excess...
Resource Type:: Masters Thesis
Full Text:: recommendations for future work. 3 2. LITERATURE REVIEW This chapter reviews the relevant literature used in

Numerical simulation of Al [subscript x] Ga [subscript 1-x] As/GaAs and (Al [subscript x] Ga [subscript 1-x]) [subscript 0.47] In [subscript 0.53] As/InP bandgap engineered solar cells

Creator:: Kamdar, Pravin P.
Resource Type:: Masters Thesis
Full Text:: of Science in Electrical and Computer Engineering presented on May 11, 1990. Title: Numerical

Development and characterization of AlInN as an alternating-current thin-film electroluminescent display phosphor

Creator:: Mueller, Matthew R.
Resource Type:: Masters Thesis
Full Text:: of Master of Science in Electrical and Computer Engineering presented on September 8, 1994. Title

Contact resistance and stability assessment of oxide-based thin film transistors

Creator:: Hung, Celia M.
Abstract:: This thesis focuses on two aspects of oxide-based thin-film transistors (TFTs), contact resistance and instability assessment. First, determination of the contact resistance of indium tin oxide (ITO) on two wide-band gap semiconductors, zinc oxide (ZnO) and indium gallium oxide (IGO), is attempted and the effects of contact resistance on device...
Resource Type:: Masters Thesis
Full Text:: degree of Master of Science in Electrical and Computer Engineering presented on September 19, 2006

Development of zinc tin oxide-based transparent thin-film transistors

Creator:: Chiang, Hai Q.
Abstract:: The focus of this thesis involves development of highly transparent, n-channel, accumulation- mode thin-film transistors employing a zinc tin oxide (ZTO) channel layer. ZTO-based transparent thin-film transistors (TTFTs) show improved device performance compared to ZnO-based TTFTs. An estimated peak effective mobility for these devices as high as ~100 cm² V⁻¹sec⁻¹...
Resource Type:: Masters Thesis
Full Text:: Master of Science in Electrical And Computer Engineering presented on August 7, 2003. Title

Characterization of solution-based inorganic semiconductor and dielectric materials for inkjet printed electronics

Creator:: Munsee, Craig L.
Abstract:: The long-term goal of this research project is the development of solution-based inorganic dielectric and semiconductor materials for inkjet printed electronics. The main focus of this thesis involves testing of the materials and devices under development. A new solution-based inorganic dielectric material (HfOSO₄), given the name hafsox, is developed and...
Resource Type:: Masters Thesis
Full Text:: Master of Science in Electrical and Computer Engineering presented on June 14, 2005. Title

ScholarsArchive@OSU

Thin-film transistors with amorphous oxide channel layers

Al-In-Sn-O thin-film transistors

Investigation of ultra-thin In-Ga-Zn-O thin-film transistors

Amorphous metal thin films as a platform for solution processing

Thermally-stable amorphous metal thin films

Numerical simulation of Al [subscript x] Ga [subscript 1-x] As/GaAs and (Al [subscript x] Ga [subscript 1-x]) [subscript 0.47] In [subscript 0.53] As/InP bandgap engineered solar cells

Development and characterization of AlInN as an alternating-current thin-film electroluminescent display phosphor

Contact resistance and stability assessment of oxide-based thin film transistors

Development of zinc tin oxide-based transparent thin-film transistors

Characterization of solution-based inorganic semiconductor and dielectric materials for inkjet printed electronics

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