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Filtering by: Alternative title ssim 4-H Club Series L-98 Remove constraint Alternative title ssim: 4-H Club Series L-98 Advisor Wager, John F. Remove constraint Advisor: Wager, John F. Resource Type Dissertation Remove constraint Resource Type: Dissertation

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  • Fabrication and characterization of thin-film transistor materials and devices

    Creator:
    Hong, David
    Abstract:
    A class of inorganic thin-film transistor (TFT) semiconductor materials has emerged involving oxides composed of post-transitional cations with (n-1)d¹⁰ns⁰ (n≥4) electronic configurations. This thesis is devoted to the pursuit of topics involving the development of these materials for TFT applications: Deposition of zinc oxide and zinc tin oxide semiconductor layers...
    Resource Type:
    Dissertation
    Full Text:
    0 0. 23 l , 0. 30 t 5- 30 ≤ 10 20 ≥ 10 −3 [3 2, 40 ,4 7] Z nO † 3. 2- 3. 3 4. 5- 5 80

  • Development of high efficiency solar absorbers

    Creator:
    Ravichandran, Ram
    Abstract:
    Current cadmium telluride and copper indium gallium diselenide thin-film solar cells (TFSCs) utilize thick absorbers (2 - 4 μm). For efficient carrier extraction in these TFSCs, the absorber layer requires high carrier mobilities and a long minority carrier lifetime, which necessitates the use of a high purity, defect-free thin film....
    Resource Type:
    Dissertation
    Full Text:
    and copper indium gallium diselenide thin-film solar cells (TFSCs) utilize thick absorbers (2 - 4 µm

  • Development of Cu-based Thin Films for Optoelectronic Applications

    Creator:
    Angelos, Gregory S.
    Abstract:
    CIGS and CdTe based commercial thin-film solar cells (TFSCs) require an absorber thickness greater than 2 µm and 4 µm, respectively, to adequately absorb the solar spectrum. To efficiently extract photoexcited electrons, these TFSCs require relatively defect-free absorbers with high-minority carrier mobility (> 100 cm2V−1s−1) and long lifetime (> 10...
    Resource Type:
    Dissertation
    Full Text:
    commercial thin-film solar cells (TFSCs) require an ab- sorber thickness greater than 2 µm and 4 µm

  • Electronic Conduction Mechanisms in Insulators

    Creator:
    Chiang, Tsung-Han
    Abstract:
    The research presented herein focuses on electrical assessment of oxide thin films as insulators. The current density-electric field (J-E) characteristics of four insulators of dramatically different electrical quality are assessed in terms of their operative electronic conduction mechanisms. Conduction in the two high-quality insulators is dominated by Ohmic conduction and...
    Resource Type:
    Dissertation
    Full Text:
    . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Electronic Transport in an Amorphous Insulator . . . . . . . . . . . . . 5 2.2.1 Bulk-limited

  • Development of oxide semiconductors : materials, devices, and integration

    Creator:
    Chiang, Hai Q.
    Abstract:
    The aim of this dissertation is to develop oxide semiconductors by radio-frequency sputtering for thin-film transistor (TFT) applications. A variety of oxide semiconductors are used as the TFT channel layer, including indium gallium oxide (IGO), zinc tin oxide (ZTO), and indium gallium zinc oxide (IGZO). The variety of materials used...
    Resource Type:
    Dissertation
    Full Text:
    , and (4) an increase in series resistance,RS. . . . . . . . 103 5.1 (a)ID as a function of bias stress

  • Design, fabrication, and testing of inhomogeneous dielectrics

    Creator:
    Lim, Sungkyoo
    Abstract:
    In this thesis the concept of inhomogeneous dielectrics is demonstrated for various optical coating applications. Compositionally-varying silicon oxynitride (SiON) dielectric layers, with the refractive index varying as a function of position, are grown by computer-controlled plasma-enhanced chemical vapor deposition (PECVD) using silane, nitrogen, and nitrous oxide reactant gases. Compositionally graded...
    Resource Type:
    Dissertation
    Full Text:
    z = 1.45, n = 2.25 (L/2)H(L/2) (H/2)L(H/2) 0 1 2 3 4 Xo/X Fig. 2.4 Equivalent index of

  • Manufacture and characterization of novel ACTFEL materials and devices

    Creator:
    Bender, Jeffrey P.
    Abstract:
    The aim of this dissertation is to develop non-traditional approaches to alternating-current thin-film electroluminescent (ACTFEL) device fabrication. ACTFEL technology suffers from a lack of adequately bright and efficient primary-color phosphors and cannot presently compete in the low-cost display market. Therefore the research presented in this dissertation focuses on an exploration...
    Resource Type:
    Dissertation
    Full Text:
    -voltage trends for 0, 15, and 30 mm, and 1, 2, 4, and 8 h of aging at 375 K, 1 kHz, and Vm 194 V. Arrows

  • Assessment of High Mobility Oxide Thin-Film Transistors

    Creator:
    Stewart, Kevin A.
    Abstract:
    The trend towards higher resolution, faster refresh rate active-matrix liquid-crystal displays (AMLCDs) as well as the emergence of active-matrix organic light-emitting diode (AMOLED) displays is driving the demand for amorphous oxide semiconductor thin-film transistors (AOS TFTs) with higher mobility. A physics-based model for carrier transport in an amorphous semiconductor is...
    Resource Type:
    Dissertation
    Full Text:
    . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1.3 Current TFT Semiconductors . . . . . . . . . . . . . . . . . . 5 2.2 Thin-Film Transistors

  • Electrical characterization of n-type aluminum gallium arsenide

    Creator:
    Kim, Seung-bae
    Resource Type:
    Dissertation
    Full Text:
    0 r1 04 O 0 -H 0 O 0 4-) CD CV 4-1 (1) E A Ar/WX,WWW://7.4446.7.44/7.607,,,,,, DX E hv

  • Alternating-current thin-film electroluminescent device fabrication and characterization

    Creator:
    Baukol, Beau
    Resource Type:
    Dissertation
    Full Text:
    ........................................................... 98 5.6 L-V curves for a sputtered SrS:Cu ACTFEL device at -40, 20, and 80°C (arrow indicates