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Filtering by: Alternative title ssim EC 1333-S Remove constraint Alternative title ssim: EC 1333-S Advisor Wager, John F. Remove constraint Advisor: Wager, John F. Resource Type Dissertation Remove constraint Resource Type: Dissertation

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  • An n-sheet, state-space ACTFEL device model

    Creator:
    Hitt, John C.
    Abstract:
    The objective of the research presented in this thesis is to develop, implement, and demonstrate the utility of an n-sheet, state-space alternating-current thin-film electroluminescent (ACTFEL) device model. In this model, the phosphor layer is discretized into n + 1 layers, with band-to-band impact ionization, space charge creation/ annihilation, and luminescent...
    Resource Type:
    Dissertation
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    E and F is termed leakage charge. Note also from Fig. 2.3 the standard rise time of 5 s, pulse

  • Assessment of High Mobility Oxide Thin-Film Transistors

    Creator:
    Stewart, Kevin A.
    Abstract:
    The trend towards higher resolution, faster refresh rate active-matrix liquid-crystal displays (AMLCDs) as well as the emergence of active-matrix organic light-emitting diode (AMOLED) displays is driving the demand for amorphous oxide semiconductor thin-film transistors (AOS TFTs) with higher mobility. A physics-based model for carrier transport in an amorphous semiconductor is...
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    Dissertation
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    ]. . . . . . . . . . . . . . . . . . . . . . 5 2.3 Current TFT semiconductors used in mass-production are a-Si:H, LTP- S, and a-IGZO. Required

  • Atomic solid state energy scale applied to novel thin-film solar absorbers

    Creator:
    Pelatt, Brian D.
    Abstract:
    The atomic solid state energy (SSE) scale is introduced as a tool for inorganic materials design. The SSE scale is obtained by assessing an average electron affinity (EA) (for a cation) or an average ionization potential (IP) (for an anion) for each atom using data from compounds having that specific...
    Resource Type:
    Dissertation
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    53 elements from s-, p-, d- and f-blocks of the periodic table. The SSE scale is shown to be related

  • DC/AC Stability of In-Ga-Zn-O Thin-Film Transistors

    Creator:
    Zhou, Fan
    Abstract:
    The electrical stability of amorphous indium-gallium-zinc oxide (a-IGZO) thinfilmtransistors (TFTs) is investigated for flat-panel display applications. Althoughproducts incorporating a-IGZO TFT backplanes are already commercially available,e.g., iMac with 5K retina display, technical challenges need to be addressed for nextgenerationapplications, e.g., active-matrix organic light-emitting diode displays.Device stability is one crucial issue. The...
    Resource Type:
    Dissertation
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    Figure 2.16 Changes of the S value caused by the AC and DC stress voltage. ………35 Figure 2.17 Threshold

  • Development of Amorphous Metal Thin Films for Thermal Inkjet Printing and Microelectronics

    Creator:
    McGlone, John M.
    Abstract:
    Due to a lack of grain boundaries, an amorphous metal thin film (AMTF) possesses advantageous mechanical properties and enhanced chemical stability that is potentially useful for thermal inkjet (TIJ) printing applications. The use of an AMTF as a TIJ resistor or cavitation plate could lead to a thinner TIJ cavitation...
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    Dissertation
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    insightful office conversa- tions and depositing Al2O3. Dr. John Conley and his group, Dr. S. Smith, Dr. N

  • Development of Cu-based Thin Films for Optoelectronic Applications

    Creator:
    Angelos, Gregory S.
    Abstract:
    CIGS and CdTe based commercial thin-film solar cells (TFSCs) require an absorber thickness greater than 2 µm and 4 µm, respectively, to adequately absorb the solar spectrum. To efficiently extract photoexcited electrons, these TFSCs require relatively defect-free absorbers with high-minority carrier mobility (> 100 cm2V−1s−1) and long lifetime (> 10...
    Resource Type:
    Dissertation
    Full Text:
    AN ABSTRACT OF THE THESIS OF Gregory S. Angelos for the

  • Development of high efficiency solar absorbers

    Creator:
    Ravichandran, Ram
    Abstract:
    Current cadmium telluride and copper indium gallium diselenide thin-film solar cells (TFSCs) utilize thick absorbers (2 - 4 μm). For efficient carrier extraction in these TFSCs, the absorber layer requires high carrier mobilities and a long minority carrier lifetime, which necessitates the use of a high purity, defect-free thin film....
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    Dissertation
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    . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 144 6.1 Cu-V-VI (V = Sb, Bi; VI = S, Se) family of materials

  • Development of oxide semiconductors : materials, devices, and integration

    Creator:
    Chiang, Hai Q.
    Abstract:
    The aim of this dissertation is to develop oxide semiconductors by radio-frequency sputtering for thin-film transistor (TFT) applications. A variety of oxide semiconductors are used as the TFT channel layer, including indium gallium oxide (IGO), zinc tin oxide (ZTO), and indium gallium zinc oxide (IGZO). The variety of materials used...
    Resource Type:
    Dissertation
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    several values ofVG. This estimate of deple- tion width usesεs andCins of 8.85× 10−13 F/cm (εr =10) and

  • Electronic Conduction Mechanisms in Insulators

    Creator:
    Chiang, Tsung-Han
    Abstract:
    The research presented herein focuses on electrical assessment of oxide thin films as insulators. The current density-electric field (J-E) characteristics of four insulators of dramatically different electrical quality are assessed in terms of their operative electronic conduction mechanisms. Conduction in the two high-quality insulators is dominated by Ohmic conduction and...
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    Dissertation
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    of 0.1 V s−1. Note that the Ohmic conduction current density is masked by the displacement current

  • Fabrication and characterization of thin-film transistor materials and devices

    Creator:
    Hong, David
    Abstract:
    A class of inorganic thin-film transistor (TFT) semiconductor materials has emerged involving oxides composed of post-transitional cations with (n-1)d¹⁰ns⁰ (n≥4) electronic configurations. This thesis is devoted to the pursuit of topics involving the development of these materials for TFT applications: Deposition of zinc oxide and zinc tin oxide semiconductor layers...
    Resource Type:
    Dissertation
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    sp ec tr um , m ∗ / m e re pr es en ts th e de ns ity of st at es ef fe ct iv e m as s