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Filtering by: Subject Metal oxide semiconductor field-effect transistors Remove constraint Subject: Metal oxide semiconductor field-effect transistors Advisor Wager, John F. Remove constraint Advisor: Wager, John F. Rights Statement Copyright Not Evaluated Remove constraint Rights Statement: Copyright Not Evaluated

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  • Hot carrier degradation of sub-micron n-channel MOSFETs subject to static stress

    Creator:
    Aminzadeh, Payman G.
    Abstract:
    Hot carrier effects in sub-micron lightly doped drain (LDD) n-channel MOSFETs under static (DC) stress are studied in order to establish the degradation mechanisms of such devices. Degradation is monitored as a function of time at various gate voltages. Under accelerated aging conditions (i.e. large drain voltages) the gate voltage...
    Resource Type:
    Masters Thesis
    Full Text:
    -semiconductor field-effect transistors (MOSFETs) are the dominant devices used in today's semiconductor