Index Catalog // ScholarsArchive@OSU

An n-sheet, state-space ACTFEL device model

Creator:: Hitt, John C.
Abstract:: The objective of the research presented in this thesis is to develop, implement, and demonstrate the utility of an n-sheet, state-space alternating-current thin-film electroluminescent (ACTFEL) device model. In this model, the phosphor layer is discretized into n + 1 layers, with band-to-band impact ionization, space charge creation/ annihilation, and luminescent...
Resource Type:: Dissertation
Full Text:: E and F is termed leakage charge. Note also from Fig. 2.3 the standard rise time of 5 s, pulse

Characterization of alternating-current thin-film SrS:Ce electroluminescent devices

Creator:: Thuemler, Robert L.
Resource Type:: Masters Thesis
Full Text:: exhibit no dynamic space charge. The exact nature of native defects in SrS:Ce ACTFEL devices is not well

Alternating-current thin-film electroluminescent device physics and modeling

Creator:: Douglas, Allan A.
Abstract:: Alternating-current thin-film electroluminescent (ACTFEL) devices are used in the formation of pixels in flat panel displays. ACTFEL flat panel displays have many advantages over other flat panel technologies. Specifically, ACTFEL panels are emissive displays, they have high brightness, wide viewing angles, and rugged construction. Although much is already known about...
Resource Type:: Masters Thesis
Full Text:: typical C-V curve. 12 Furthermore, note that these calculations assume that there is no spatial

Novel ACTFEL phosphor development

Creator:: Ang, Wie Ming
Abstract:: The goal of this thesis is to identify and to explore novel ACTFEL phosphor materials. Several important materials properties relevant to ACTFEL phosphor development are identified. All of these properties cannot be obtained simultaneously. Therefore, several key phosphor materials properties are identified as critical to the development of an ACTFEL...
Resource Type:: Dissertation
Full Text:: Redacted for Privacy Redacted for Privacy Redacted for Privacy ACKNOWLEDGEMENT Thanks to Prof. John F

ACTFEL phosphor deposition by RF sputtering

Creator:: Ang, Wie Ming
Resource Type:: Masters Thesis
Full Text:: Privacy Abstract approved: Dr. John F. W ger In this thesis, a research program with the goal of

A study of deep levels of AlGaAs/GaAs heterojunction bipolar transistors

Creator:: Huang, Chun-ta
Abstract:: A study of deep levels of the emitter region of a heterojunction bipolar transistor is investigated using deep level transient spectroscopy (DLTS), deep level admittance spectroscopy (DLAS), thermally stimulated capacitance (TSCAP), and capacitance-voltage (C-V) profiling. The DX center, with an activation energy of 0.45 eV, is the only deep level...
Resource Type:: Masters Thesis
Full Text:: to my advisor, Professor John F. Wager, for the support, guidance and encouragement he has given me

High resolution electroluminescent display using active matrix approach

Creator:: Khormaei, Iranpour
Resource Type:: Dissertation
Full Text:: : High Resolution Electroluminescent Display Using Active Matrix Approach. Abstract approved: John F

Phosphor development for alternating-current thin-film electroluminescent applications

Creator:: Nguyen, Tin T.
Resource Type:: Masters Thesis
Full Text:: : Dr. J F. Wager The primary goal of this thesis is to describe a research program with the goal of

Development and characterization of AlInN as an alternating-current thin-film electroluminescent display phosphor

Creator:: Mueller, Matthew R.
Resource Type:: Masters Thesis
Full Text:: Phosphor. Abstract approved: Dr. John F. Wager The goal of this thesis is to evaluate Al InN as an

Hot carrier degradation of sub-micron n-channel MOSFETs subject to static stress

Creator:: Aminzadeh, Payman G.
Abstract:: Hot carrier effects in sub-micron lightly doped drain (LDD) n-channel MOSFETs under static (DC) stress are studied in order to establish the degradation mechanisms of such devices. Degradation is monitored as a function of time at various gate voltages. Under accelerated aging conditions (i.e. large drain voltages) the gate voltage...
Resource Type:: Masters Thesis
Full Text:: Degradation Of Sub-Micron n-channel MOSFETs Subiect to Static Stress. Abstract approved: Dr. John F. Wager

ScholarsArchive@OSU

An n-sheet, state-space ACTFEL device model

Characterization of alternating-current thin-film SrS:Ce electroluminescent devices

Alternating-current thin-film electroluminescent device physics and modeling

Novel ACTFEL phosphor development

ACTFEL phosphor deposition by RF sputtering

A study of deep levels of AlGaAs/GaAs heterojunction bipolar transistors

High resolution electroluminescent display using active matrix approach

Phosphor development for alternating-current thin-film electroluminescent applications

Development and characterization of AlInN as an alternating-current thin-film electroluminescent display phosphor

Hot carrier degradation of sub-micron n-channel MOSFETs subject to static stress

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