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Filtering by: Alternative title ssim General technical report NE-321 Remove constraint Alternative title ssim: General technical report NE-321 Advisor Wager, John F. Remove constraint Advisor: Wager, John F. Rights Statement In Copyright Remove constraint Rights Statement: In Copyright

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  • DC/AC Stability of In-Ga-Zn-O Thin-Film Transistors

    Creator:
    Zhou, Fan
    Abstract:
    The electrical stability of amorphous indium-gallium-zinc oxide (a-IGZO) thinfilmtransistors (TFTs) is investigated for flat-panel display applications. Althoughproducts incorporating a-IGZO TFT backplanes are already commercially available,e.g., iMac with 5K retina display, technical challenges need to be addressed for nextgenerationapplications, e.g., active-matrix organic light-emitting diode displays.Device stability is one crucial issue. The...
    Resource Type:
    Dissertation
    Full Text:
    -IGZO TFT backplanes are already commercially available, e.g., iMac with 5K retina display, technical

  • Development, fabrication, and characterization of transparent electronic devices

    Creator:
    Hoffman, Randy L.
    Abstract:
    The objective of this thesis is to provide an initial demonstration of the feasibility of constructing highly transparent active electronic devices. Such a demonstration is successfully achieved in the fabrication of ZnO-based thin film transistors (TFTs) exhibiting transparency greater than ~90% in the visible portion of the electromagnetic spectrum and...
    Resource Type:
    Masters Thesis
    Full Text:
    for the behavior of these devices in particular, and of transparent electronic devices in general

  • Nontraditional amorphous oxide semiconductor thin-film transistor fabrication

    Creator:
    Sundholm, Eric Steven
    Abstract:
    Fabrication techniques and process integration considerations for amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) constitute the central theme of this dissertation. Within this theme three primary areas of focus are pursued. The first focus involves formulating a general framework for assessing passivation. Avoiding formation of an undesirable backside accumulation layer...
    Resource Type:
    Dissertation
    Full Text:
    a general framework for assessing passiva- tion. Avoiding formation of an undesirable backside

  • Process development and modeling of thin-film transistors

    Creator:
    Hong, David
    Abstract:
    A class of high-performance thin-film transistor (TFT) channel materials has emerged involving oxides composed of heavy-metal cations (HMCs) with (n-1)d¹⁰ns⁰ (n≥4) electronic configurations. This thesis is devoted to the pursuit of three topics involving the development of these materials for TFT applications: modeling TFT currentvoltage characteristics, an exploratory method for...
    Resource Type:
    Masters Thesis
    Full Text:
    -voltage characteristics of a TFT. Initially, a general equation, the conductance integral equation, is

  • Development of zinc tin oxide-based transparent thin-film transistors

    Creator:
    Chiang, Hai Q.
    Abstract:
    The focus of this thesis involves development of highly transparent, n-channel, accumulation- mode thin-film transistors employing a zinc tin oxide (ZTO) channel layer. ZTO-based transparent thin-film transistors (TTFTs) show improved device performance compared to ZnO-based TTFTs. An estimated peak effective mobility for these devices as high as ~100 cm² V⁻¹sec⁻¹...
    Resource Type:
    Masters Thesis
    Full Text:
    addition, the outstanding technical staff at OSU have made considerable contri- butions. If it were not

  • Fabrication and characterization of thin-film transistor materials and devices

    Creator:
    Hong, David
    Abstract:
    A class of inorganic thin-film transistor (TFT) semiconductor materials has emerged involving oxides composed of post-transitional cations with (n-1)d¹⁰ns⁰ (n≥4) electronic configurations. This thesis is devoted to the pursuit of topics involving the development of these materials for TFT applications: Deposition of zinc oxide and zinc tin oxide semiconductor layers...
    Resource Type:
    Dissertation
    Full Text:
    . . . . . . . . . . . . . . . . . . . . . . . . . 43 3.3 Four general thin-film transistor configurations, including: (a) stag- gered bottom-gate, (b

  • Oxide phosphors deposited by activated reactive evaporation for ACTFEL device applications

    Creator:
    Yokoyama, Tomoe
    Abstract:
    The goal of this thesis study is to develop an activated reactive evaporation (ARE) system and to demonstrate its utility by fabricating-alternating current thin-film electroluminescent (ACTFEL) oxide phosphor devices. ARE entails evaporation in an activated gas. The main ARE system components are three thermal evaporation sources, a microwave power supply,...
    Resource Type:
    Masters Thesis
    Full Text:
    would like to thank Manfred Dittrich and Chris Tasker for their technical support in the development

  • Assessment of High Mobility Oxide Thin-Film Transistors

    Creator:
    Stewart, Kevin A.
    Abstract:
    The trend towards higher resolution, faster refresh rate active-matrix liquid-crystal displays (AMLCDs) as well as the emergence of active-matrix organic light-emitting diode (AMOLED) displays is driving the demand for amorphous oxide semiconductor thin-film transistors (AOS TFTs) with higher mobility. A physics-based model for carrier transport in an amorphous semiconductor is...
    Resource Type:
    Dissertation
    Full Text:
    their technical contributions to this work as well as making this a pleasant environment to work in

  • Manufacture and characterization of novel ACTFEL materials and devices

    Creator:
    Bender, Jeffrey P.
    Abstract:
    The aim of this dissertation is to develop non-traditional approaches to alternating-current thin-film electroluminescent (ACTFEL) device fabrication. ACTFEL technology suffers from a lack of adequately bright and efficient primary-color phosphors and cannot presently compete in the low-cost display market. Therefore the research presented in this dissertation focuses on an exploration...
    Resource Type:
    Dissertation
    Full Text:
    for the Tasker-Chiang rf sputtering system and provided significant technical assistance during

  • Al-In-Sn-O thin-film transistors

    Creator:
    Stewart, Kevin A.
    Abstract:
    The aim of the research undertaken for this thesis was to develop a new high-performance amorphous oxide semiconductor (AOS) for use as a channel layer in a thin-film transistor (TFT). AOS TFTs offer higher electron mobility than the established amorphous silicon based technology. A new channel material comprised of aluminum...
    Resource Type:
    Masters Thesis
    Full Text:
    for their technical contributions to this work as well as making this a pleasant environment to work