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Filtering by: Alternative title ssim EC 600 Remove constraint Alternative title ssim: EC 600 Advisor Wager, John F. Remove constraint Advisor: Wager, John F. Subject Thin film transistors Remove constraint Subject: Thin film transistors

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  • Contact resistance and stability assessment of oxide-based thin film transistors

    Creator:
    Hung, Celia M.
    Abstract:
    This thesis focuses on two aspects of oxide-based thin-film transistors (TFTs), contact resistance and instability assessment. First, determination of the contact resistance of indium tin oxide (ITO) on two wide-band gap semiconductors, zinc oxide (ZnO) and indium gallium oxide (IGO), is attempted and the effects of contact resistance on device...
    Resource Type:
    Masters Thesis
    Full Text:
    after post-deposition annealing at a temperature of ~ 600 °C for ZnO and IGO TFTs, and ~ 400 °C for

  • Development of oxide semiconductors : materials, devices, and integration

    Creator:
    Chiang, Hai Q.
    Abstract:
    The aim of this dissertation is to develop oxide semiconductors by radio-frequency sputtering for thin-film transistor (TFT) applications. A variety of oxide semiconductors are used as the TFT channel layer, including indium gallium oxide (IGO), zinc tin oxide (ZTO), and indium gallium zinc oxide (IGZO). The variety of materials used...
    Resource Type:
    Dissertation
    Full Text:
    discrete trap lev- els. The dotted area and∆EC/∆EV in the amorphous case represent localized states and

  • Process development and modeling of thin-film transistors

    Creator:
    Hong, David
    Abstract:
    A class of high-performance thin-film transistor (TFT) channel materials has emerged involving oxides composed of heavy-metal cations (HMCs) with (n-1)d¹⁰ns⁰ (n≥4) electronic configurations. This thesis is devoted to the pursuit of three topics involving the development of these materials for TFT applications: modeling TFT currentvoltage characteristics, an exploratory method for...
    Resource Type:
    Masters Thesis
    Full Text:
    channel layer is annealed in air at 600° C. This device is unpassivated. VGS is decreased from 40 V (top

  • Fabrication process assessment and negative bias illumination stress study of IGZO and ZTO TFTs

    Creator:
    Hoshino, Ken
    Abstract:
    Indium-gallium-zinc oxide (IGZO) and zinc-tin oxide (ZTO) are investigated for thin-film transistor (TFT) applications. Negative bias illumination stress (NBIS) is employed for electrical stability assessment. Unpassivated IGZO and ZTO TFTs suffer from severe NBIS instabilities. Zinc-tin-silicon oxide is found to be an effective passivation layer for IGZO and ZTO TFTs,...
    Resource Type:
    Dissertation
    Full Text:
    polycrystalline ZnO. EC, EV, and EF are the conduction band minimum, the valence band maximum, and the Fermi

  • Amorphous oxide semiconductors in circuit applications

    Creator:
    McFarlane, Brian Ross
    Abstract:
    The focus of this thesis is the investigation of thin-film transistors (TFTs) based on amorphous oxide semiconductors (AOSs) in two circuit applications. To date, circuits implemented with AOS-based TFTs have been primarily enhancement-enhancement inverters, ring oscillators based on these inverters operating at peak frequencies up to ~400 kHz, and two-transistor...
    Resource Type:
    Masters Thesis
    Full Text:
    Metal Ins. Semiconductor Ec EF EV Ec EF EV Ec EF EV (a) (b) (c) Figure 2.2: Energy band diagrams

  • Characterization of solution-based inorganic semiconductor and dielectric materials for inkjet printed electronics

    Creator:
    Munsee, Craig L.
    Abstract:
    The long-term goal of this research project is the development of solution-based inorganic dielectric and semiconductor materials for inkjet printed electronics. The main focus of this thesis involves testing of the materials and devices under development. A new solution-based inorganic dielectric material (HfOSO₄), given the name hafsox, is developed and...
    Resource Type:
    Masters Thesis
    Full Text:
    = metal work function, V1 = builtin voltage, E9 = semiconductor energy bandgap, Ec = bottom of conduction