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  • Phosphor development for alternating-current thin-film electroluminescent applications

    Creator:
    Nguyen, Tin T.
    Resource Type:
    Masters Thesis
    Full Text:
    graduate program. Special thanks are extended to Dr. D. Goodnick, Dr. B. Lee, and Dr. D. McIntyre for

  • Atomic solid state energy scale applied to novel thin-film solar absorbers

    Creator:
    Pelatt, Brian D.
    Abstract:
    The atomic solid state energy (SSE) scale is introduced as a tool for inorganic materials design. The SSE scale is obtained by assessing an average electron affinity (EA) (for a cation) or an average ionization potential (IP) (for an anion) for each atom using data from compounds having that specific...
    Resource Type:
    Dissertation
    Full Text:
    AN ABSTRACT OF THE DISSERTATION OF Brian D. Pelatt for the

  • Modeling phosphor space charge in alternating-current thin-film electroluminescent devices

    Creator:
    Keir, Paul D.
    Abstract:
    The accomplishments presented in this thesis are the development of three models for simulation of space charge generation in the phosphor layer of alternating current thin-film electroluminescent (ACTFEL) devices and the results from simulation of these models. First, a single sheet charge model is developed and simulated. The single sheet...
    Resource Type:
    Masters Thesis
    Full Text:
    -film electroluminescent devices AN ABSTRACT OF THE THESIS OF Paul D. Keir for the degree of Master

  • Fabrication and characterization of ACTFEL devices

    Creator:
    Keir, Paul D.
    Abstract:
    The goal of this thesis is the identification and synthesis of high-luminance, primary color alternating-current thin-film electroluminescent (ACTFEL) devices. Special attention is paid to the synthesis of primary color green ACTFEL devices because of the lack of an adequate primary green ACTFEL phosphor and the dominance of green wavelengths in...
    Resource Type:
    Dissertation
    Full Text:
    ABSTRACT OF THE DISSERTATION OF Paul D. Keir for the degree of Doctor of Philosophy in Electrical

  • Electrical characterization and aging studies of green ZnS: Tb AC thin-film electroluminescent devices

    Creator:
    Kumar, Manoj, 1972-
    Resource Type:
    Masters Thesis
    Full Text:
    effort: Dr. Shih-Lien Lu, Dr. V.K. Tripathi, and Dr. Bruce D. Ambrosio. I also wish to thank Dr. Thomas

  • Investigation of ultra-thin In-Ga-Zn-O thin-film transistors

    Creator:
    Chiang, Tsung-Han
    Abstract:
    The objective of the work reported herein is to explore the impact of decreasing channel thickness on radio-frequency (RF) sputtered amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) electrical performance through the evaluation of drain current versus gate voltage (I[subscript D] − V[subscript G]) transfer curves. For a fixed set of...
    Resource Type:
    Masters Thesis
    Full Text:
    , I OFF D ) increases (decreases) with decreasing a-IGZO channel layer thickness (h) for h < 11 nm

  • Process development and modeling of thin-film transistors

    Creator:
    Hong, David
    Abstract:
    A class of high-performance thin-film transistor (TFT) channel materials has emerged involving oxides composed of heavy-metal cations (HMCs) with (n-1)d¹⁰ns⁰ (n≥4) electronic configurations. This thesis is devoted to the pursuit of three topics involving the development of these materials for TFT applications: modeling TFT currentvoltage characteristics, an exploratory method for...
    Resource Type:
    Masters Thesis
    Full Text:
    cations (HMCs) with (n-1)d'°ns° (n4) electronic configurations. This thesis is devoted to the pursuit of

  • Instability and temperature-dependence assessment of IGZO TFTs

    Creator:
    Hoshino, Ken
    Abstract:
    Amorphous oxide semiconductors (AOSs) are of great current interest for thin-film transistor (TFT) channel layer applications. In particular, indium gallium zinc oxide (IGZO) is under intense development for commercial applications because of its demonstrated high performance at low processing temperatures. The objective of the research presented in this thesis is...
    Resource Type:
    Masters Thesis
    Full Text:
    ) coplanar top-gate, and (d) coplanar bottom-gate. ....................4 2.2 A simplified illustration of a

  • Discrete trap modeling of thin-film transistors

    Creator:
    Yerubandi, Ganesh Chakravarthy
    Abstract:
    A discrete trap model is developed and employed for elucidation of thin-film transistor (TFT) device physics trends. An attractive feature of this model is that only two model parameters are required, the trap energy depth, E[subscript T], and the trap density, N[subscript T]. The most relevant trends occur when E[subscript...
    Resource Type:
    Masters Thesis
    Full Text:
    -gate, (c) staggered top-gate, and (d) coplanar top-gate

  • Amorphous oxide semiconductors in circuit applications

    Creator:
    McFarlane, Brian Ross
    Abstract:
    The focus of this thesis is the investigation of thin-film transistors (TFTs) based on amorphous oxide semiconductors (AOSs) in two circuit applications. To date, circuits implemented with AOS-based TFTs have been primarily enhancement-enhancement inverters, ring oscillators based on these inverters operating at peak frequencies up to ~400 kHz, and two-transistor...
    Resource Type:
    Masters Thesis
    Full Text:
    enhancement-depletion (E-D) inverter based on heterogeneous channel materials. Simulation results using

  • Al-In-Sn-O thin-film transistors

    Creator:
    Stewart, Kevin A.
    Abstract:
    The aim of the research undertaken for this thesis was to develop a new high-performance amorphous oxide semiconductor (AOS) for use as a channel layer in a thin-film transistor (TFT). AOS TFTs offer higher electron mobility than the established amorphous silicon based technology. A new channel material comprised of aluminum...
    Resource Type:
    Masters Thesis
    Full Text:
    on-to-off ratio of ION −OF F = 107, and a sub-threshold swing of S = 0.2 V /dec D were achieved

  • Amorphous metal thin films as a platform for solution processing

    Creator:
    Landau, Nicholas P.
    Abstract:
    The research presented herein represents an effort to combine the ultra-smooth surface of an amorphous metal thin film (AMTF) with a solution-processed dielectric synthesized via prompt inorganic condensation (PIC). Analysis of dielectric film quality is carried out via electrical measurements of metal-insulator-metal (MIM) diodes. Anneals at 500 and 700 °C...
    Resource Type:
    Masters Thesis
    Full Text:
    of ALD-deposited Al2O3 prior to PIC Al2O3 deposition is shown to reduce the high leak- age

  • Improved stability in ACTFEL devices

    Creator:
    Khormaei, Iranpour
    Abstract:
    The stability of ZnS:Mn AC thin film Electroluminescence (ACEFEL) devices as demonstrated by the brightness-voltage (BV) characteristics is discussed. Two procedures for improvement of the stability are demonstrated. The first method is the addition of a CaS buffer layer to one or both interfaces of the ZnS active phosphor layer....
    Resource Type:
    Masters Thesis
    Full Text:
    treatment of the ZnS surface in air or an oxygen plasma prior to the deposition of the second insulator. A

  • Fabrication and characterization of thin-film transistor materials and devices

    Creator:
    Hong, David
    Abstract:
    A class of inorganic thin-film transistor (TFT) semiconductor materials has emerged involving oxides composed of post-transitional cations with (n-1)d¹⁰ns⁰ (n≥4) electronic configurations. This thesis is devoted to the pursuit of topics involving the development of these materials for TFT applications: Deposition of zinc oxide and zinc tin oxide semiconductor layers...
    Resource Type:
    Dissertation
    Full Text:
    the gate for several biasing conditions: (b) equilibrium, (c) VGS <0 V, and (d) VGS >0 V

  • Static space charge in evaporated ZnS:Mn alternating-current thin-film electroluminescent devices

    Creator:
    Hitt, John C.
    Resource Type:
    Masters Thesis
    Full Text:
    electrically reset to the same starting conditions in terms of polarization charge and field prior to the

  • Development of Amorphous Metal Thin Films for Thermal Inkjet Printing and Microelectronics

    Creator:
    McGlone, John M.
    Abstract:
    Due to a lack of grain boundaries, an amorphous metal thin film (AMTF) possesses advantageous mechanical properties and enhanced chemical stability that is potentially useful for thermal inkjet (TIJ) printing applications. The use of an AMTF as a TIJ resistor or cavitation plate could lead to a thinner TIJ cavitation...
    Resource Type:
    Dissertation
    Full Text:
    . Alimardani, D. Austin, M. Jenkins, M. Hayes and T. Klarr, contributed productive discussions about MIM

  • Thermally-stable amorphous metal thin films

    Creator:
    McGlone, John M.
    Abstract:
    Amorphous metal thin films (AMTFs) are of potential use for metal-insulator-metal (MIM) tunnel diode applications due to their ultra-smooth surfaces, a consequence of their amorphous microstructure. The objective of this thesis is to design a thermally-stable AMTF capable of maintaining MIM tunnel diode performance after a post-deposition anneal in excess...
    Resource Type:
    Masters Thesis
    Full Text:
    Al2O3. Dr. John Conley and his group, S. Smith, N. Alimardani, D. Austin, and T. Klarr, contributed

  • Characterization of alternating-current thin-film SrS:Ce electroluminescent devices

    Creator:
    Thuemler, Robert L.
    Resource Type:
    Masters Thesis
    Full Text:
    evaporated SrS:Ce, and (d) MOCVD SrS:Ce ACTFEL devices. 26 4.3 Negative polarity C-V curves for (a) ALE

  • Development of oxide semiconductors : materials, devices, and integration

    Creator:
    Chiang, Hai Q.
    Abstract:
    The aim of this dissertation is to develop oxide semiconductors by radio-frequency sputtering for thin-film transistor (TFT) applications. A variety of oxide semiconductors are used as the TFT channel layer, including indium gallium oxide (IGO), zinc tin oxide (ZTO), and indium gallium zinc oxide (IGZO). The variety of materials used...
    Resource Type:
    Dissertation
    Full Text:
    ) depletion,VGS< 0 and (d) accumulation,VGS> 0. . . 15 2.2 Comparison of schematic cross-sections and energy

  • Electronic Conduction Mechanisms in Insulators

    Creator:
    Chiang, Tsung-Han
    Abstract:
    The research presented herein focuses on electrical assessment of oxide thin films as insulators. The current density-electric field (J-E) characteristics of four insulators of dramatically different electrical quality are assessed in terms of their operative electronic conduction mechanisms. Conduction in the two high-quality insulators is dominated by Ohmic conduction and...
    Resource Type:
    Dissertation
    Full Text:
    am honored to be his last student prior to his retirement. Under his tutelage, the priceless amount