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Filtering by: Alternative title ssim 4-H Club Series L-98 Remove constraint Alternative title ssim: 4-H Club Series L-98 Advisor Wager, John F. Remove constraint Advisor: Wager, John F.

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  • Development, fabrication, and characterization of transparent electronic devices

    Creator:
    Hoffman, Randy L.
    Abstract:
    The objective of this thesis is to provide an initial demonstration of the feasibility of constructing highly transparent active electronic devices. Such a demonstration is successfully achieved in the fabrication of ZnO-based thin film transistors (TFTs) exhibiting transparency greater than ~90% in the visible portion of the electromagnetic spectrum and...
    Resource Type:
    Masters Thesis
    Full Text:
    AN ABSTRACT OF THE THESIS OF Randy L. Hoffman for the degree of

  • Characterization of alternating-current thin-film SrS:Ce electroluminescent devices

    Creator:
    Thuemler, Robert L.
    Resource Type:
    Masters Thesis
    Full Text:
    B 30 ps width F -4, 0- 5 ps rise and fall H 1 ms Figure 2.3 Standard ACTFEL driving waveform

  • Characterization of solution-based inorganic semiconductor and dielectric materials for inkjet printed electronics

    Creator:
    Munsee, Craig L.
    Abstract:
    The long-term goal of this research project is the development of solution-based inorganic dielectric and semiconductor materials for inkjet printed electronics. The main focus of this thesis involves testing of the materials and devices under development. A new solution-based inorganic dielectric material (HfOSO₄), given the name hafsox, is developed and...
    Resource Type:
    Masters Thesis
    Full Text:
    AN ABSTRACT OF THE THESIS OF Craig L. Munsee for the degree of

  • Fabrication and characterization of thin-film transistor materials and devices

    Creator:
    Hong, David
    Abstract:
    A class of inorganic thin-film transistor (TFT) semiconductor materials has emerged involving oxides composed of post-transitional cations with (n-1)d¹⁰ns⁰ (n≥4) electronic configurations. This thesis is devoted to the pursuit of topics involving the development of these materials for TFT applications: Deposition of zinc oxide and zinc tin oxide semiconductor layers...
    Resource Type:
    Dissertation
    Full Text:
    0 0. 23 l , 0. 30 t 5- 30 ≤ 10 20 ≥ 10 −3 [3 2, 40 ,4 7] Z nO † 3. 2- 3. 3 4. 5- 5 80

  • Inorganic thin-film solar cells

    Creator:
    Spies, Jack Alexander
    Abstract:
    The primary objective of this thesis is to explore new absorber and p-type window layer materials for thin-film solar cell applications. A new thin-film electron beam deposition system has been installed, is now operational, and has been used to deposit several types of solar cell absorber layers. Material investigations include...
    Resource Type:
    Masters Thesis
    Full Text:
    ) subcontract number XAT-4-33624-11. ”The length of this document defends it well against the risk of its

  • Physical vapor deposition of novel thin-film solar absorbers

    Creator:
    Waters, Benjamin E.
    Abstract:
    Current leading thin-film solar cell technologies, i.e., cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS), employ elements which are either toxic (Cd), or rare and/or expensive (In, Te, Ga, and Cd). The aim of this thesis is to investigate new, abundant, non-toxic p-type semiconductors for potential solar absorber application....
    Resource Type:
    Masters Thesis
    Full Text:
    region. [2, 4] The series and shunt resistances in the model, Rs and Rsh, serve to distort the current

  • Development of high efficiency solar absorbers

    Creator:
    Ravichandran, Ram
    Abstract:
    Current cadmium telluride and copper indium gallium diselenide thin-film solar cells (TFSCs) utilize thick absorbers (2 - 4 μm). For efficient carrier extraction in these TFSCs, the absorber layer requires high carrier mobilities and a long minority carrier lifetime, which necessitates the use of a high purity, defect-free thin film....
    Resource Type:
    Dissertation
    Full Text:
    and copper indium gallium diselenide thin-film solar cells (TFSCs) utilize thick absorbers (2 - 4 µm

  • Transparent electronics : thin-film transistors and integrated circuits

    Creator:
    Presley, Rick E.
    Abstract:
    This thesis focuses on two aspects of transparent electronics, SnO₂ transparent thin-film transistors (TTFTs) and transparent circuits. Both depletion- and enhancement-mode SnO₂ TTFTs are realized. The maximum effective mobility for the depletion- and enhancement-mode devices are 2 cm²V⁻¹s⁻¹ and 0.8 cm²V⁻¹s⁻¹, respectively. A variety of techniques to decrease the carrier...
    Resource Type:
    Masters Thesis
    Full Text:
    . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 4. TIN OXIDE TRANSPARENT THIN-FILM TRANSISTORS . . . . . . . . . . . . 35 4.1 SnO2 TTFT device

  • Investigation of ultra-thin In-Ga-Zn-O thin-film transistors

    Creator:
    Chiang, Tsung-Han
    Abstract:
    The objective of the work reported herein is to explore the impact of decreasing channel thickness on radio-frequency (RF) sputtered amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) electrical performance through the evaluation of drain current versus gate voltage (I[subscript D] − V[subscript G]) transfer curves. For a fixed set of...
    Resource Type:
    Masters Thesis
    Full Text:
    , I OFF D ) increases (decreases) with decreasing a-IGZO channel layer thickness (h) for h < 11 nm

  • Modeling and development of p-type thin-film transistors

    Creator:
    Spiegelberg, Matthew Craig
    Abstract:
    The primary focus of this thesis involves modeling and development of p-type thin-film transistors (p-TFTs), moving towards the realization of a filly transparent thin-film transistor (TTFT). The modeling portion of this thesis emphasizes the development of physics-based TFT models, specifically focusing on the elucidation of non-ideal current-voltage characteristic behavior. A...
    Resource Type:
    Masters Thesis
    Full Text:
    . RsERJES = Rs + RD and RD =Rs. Vos= 1 V. RSERJEs = [On, 10 kn, 100 kn, 1 Mn, oo n]. Z/L = 10, h = 100 nm