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Filtering by: Creator Bernard, Kim S. Remove constraint Creator: Bernard, Kim S. Advisor Wager, John F. Remove constraint Advisor: Wager, John F.

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  • Electrical characterization of n-type aluminum gallium arsenide

    Creator:
    Kim, Seung-bae
    Resource Type:
    Dissertation
    Full Text:
    arsenide AN ABSTRACT OF THE THESIS OF Seung-Bae Kim for the degree of Doctor of Philosophy in

  • Diamond-like carbon films for electroluminescent applications

    Creator:
    Kim, Seung-bae
    Abstract:
    White electroluminescence (EL) was observed for the first time from diamond-like carbon (DLC) films at room temperature. Electroluminescence was observed by the application of ac voltages in excess of 200 V to a metal-insulator- semiconductor (i.e. DLC)-insulator-metal (MISIM) device structure. For EL applications, three types of the DLC films were...
    Resource Type:
    Masters Thesis
    Full Text:
    applications AN ABSTRACT OF THE THESIS OF Seung-Bae Kim for the degree of Master of Science in Electrical

  • Development of Cu-based Thin Films for Optoelectronic Applications

    Creator:
    Angelos, Gregory S.
    Abstract:
    CIGS and CdTe based commercial thin-film solar cells (TFSCs) require an absorber thickness greater than 2 µm and 4 µm, respectively, to adequately absorb the solar spectrum. To efficiently extract photoexcited electrons, these TFSCs require relatively defect-free absorbers with high-minority carrier mobility (> 100 cm2V−1s−1) and long lifetime (> 10...
    Resource Type:
    Dissertation
    Full Text:
    AN ABSTRACT OF THE THESIS OF Gregory S. Angelos for the

  • Al-In-Sn-O thin-film transistors

    Creator:
    Stewart, Kevin A.
    Abstract:
    The aim of the research undertaken for this thesis was to develop a new high-performance amorphous oxide semiconductor (AOS) for use as a channel layer in a thin-film transistor (TFT). AOS TFTs offer higher electron mobility than the established amorphous silicon based technology. A new channel material comprised of aluminum...
    Resource Type:
    Masters Thesis
    Full Text:
    on-to-off ratio of ION −OF F = 107, and a sub-threshold swing of S = 0.2 V /dec D were achieved

  • Assessment of High Mobility Oxide Thin-Film Transistors

    Creator:
    Stewart, Kevin A.
    Abstract:
    The trend towards higher resolution, faster refresh rate active-matrix liquid-crystal displays (AMLCDs) as well as the emergence of active-matrix organic light-emitting diode (AMOLED) displays is driving the demand for amorphous oxide semiconductor thin-film transistors (AOS TFTs) with higher mobility. A physics-based model for carrier transport in an amorphous semiconductor is...
    Resource Type:
    Dissertation
    Full Text:
    ]. . . . . . . . . . . . . . . . . . . . . . 5 2.3 Current TFT semiconductors used in mass-production are a-Si:H, LTP- S, and a-IGZO. Required

  • Investigation of ultra-thin In-Ga-Zn-O thin-film transistors

    Creator:
    Chiang, Tsung-Han
    Abstract:
    The objective of the work reported herein is to explore the impact of decreasing channel thickness on radio-frequency (RF) sputtered amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) electrical performance through the evaluation of drain current versus gate voltage (I[subscript D] − V[subscript G]) transfer curves. For a fixed set of...
    Resource Type:
    Masters Thesis
    Full Text:
    ≈ 0 V, field-effect mobility of µFE = 9 cm−2V−1s−1, subthreshold slope of S = 90 mV/dec, and drain

  • Physical vapor deposition of novel thin-film solar absorbers

    Creator:
    Waters, Benjamin E.
    Abstract:
    Current leading thin-film solar cell technologies, i.e., cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS), employ elements which are either toxic (Cd), or rare and/or expensive (In, Te, Ga, and Cd). The aim of this thesis is to investigate new, abundant, non-toxic p-type semiconductors for potential solar absorber application....
    Resource Type:
    Masters Thesis
    Full Text:
    white circles), S (large white circles), and Ta (black dots). Large channels in the [010] direc- tion

  • Oxide phosphors deposited by activated reactive evaporation for ACTFEL device applications

    Creator:
    Yokoyama, Tomoe
    Abstract:
    The goal of this thesis study is to develop an activated reactive evaporation (ARE) system and to demonstrate its utility by fabricating-alternating current thin-film electroluminescent (ACTFEL) oxide phosphor devices. ARE entails evaporation in an activated gas. The main ARE system components are three thermal evaporation sources, a microwave power supply,...
    Resource Type:
    Masters Thesis
    Full Text:
    approximately 2 nm/s. As-deposited films are trans- parent, insulating, and amorphous with an index of

  • Low-cost deposition methods for transparent thin-film transistors

    Creator:
    Norris, Benjamin J.
    Abstract:
    The objective of this dissertation is to introduce low-cost processing methods for the fabrication of ZnO transparent thin-film transistors (TTFTs). A novel method for depositing ZnO body layers via spin-coating of a zinc nitrate-based spin solution is presented. The processing conditions of spin-coated ZnO are optimized to produce continuous and...
    Resource Type:
    Dissertation
    Full Text:
    . Spin-coated ZnO TTFT mobilities are consistently in the range of 0.1 - 0.2 cm2/V s. Spin-coating

  • Development of oxide semiconductors : materials, devices, and integration

    Creator:
    Chiang, Hai Q.
    Abstract:
    The aim of this dissertation is to develop oxide semiconductors by radio-frequency sputtering for thin-film transistor (TFT) applications. A variety of oxide semiconductors are used as the TFT channel layer, including indium gallium oxide (IGO), zinc tin oxide (ZTO), and indium gallium zinc oxide (IGZO). The variety of materials used...
    Resource Type:
    Dissertation
    Full Text:
    several values ofVG. This estimate of deple- tion width usesεs andCins of 8.85× 10−13 F/cm (εr =10) and