The objective of the work reported herein is to explore the impact of decreasing channel thickness on radio-frequency (RF) sputtered amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) electrical performance through the evaluation of drain current versus gate voltage (I[subscript D] − V[subscript G]) transfer curves. For a fixed set of...
A class of inorganic thin-film transistor (TFT) semiconductor materials has emerged involving oxides composed of post-transitional cations with (n-1)d¹⁰ns⁰ (n≥4) electronic configurations. This thesis is devoted to the pursuit of topics involving the development of these materials for TFT applications: Deposition of zinc oxide and zinc tin oxide semiconductor
layers...
Current cadmium telluride and copper indium gallium diselenide thin-film solar cells
(TFSCs) utilize thick absorbers (2 - 4 μm). For efficient carrier extraction in these TFSCs,
the absorber layer requires high carrier mobilities and a long minority carrier lifetime, which
necessitates the use of a high purity, defect-free thin film....
The electrical stability of amorphous indium-gallium-zinc oxide (a-IGZO) thinfilmtransistors (TFTs) is investigated for flat-panel display applications. Althoughproducts incorporating a-IGZO TFT backplanes are already commercially available,e.g., iMac with 5K retina display, technical challenges need to be addressed for nextgenerationapplications, e.g., active-matrix organic light-emitting diode displays.Device stability is one crucial issue. The...
The objective of this thesis is to provide an initial demonstration of the feasibility of constructing highly transparent active electronic devices. Such a demonstration is successfully achieved in the fabrication of ZnO-based thin film transistors (TFTs) exhibiting transparency greater than ~90% in the visible portion of the electromagnetic spectrum and...
The focus of this thesis involves development of highly transparent, n-channel, accumulation- mode thin-film transistors employing a zinc tin oxide (ZTO) channel layer. ZTO-based transparent thin-film transistors (TTFTs) show improved device performance compared to ZnO-based TTFTs. An estimated peak effective mobility for these devices as high as ~100 cm² V⁻¹sec⁻¹...
The objective of this thesis is to contribute to the development of p-type materials for transparent electronics applications. Thin films of ®-BaCu2S2, a p-type semi-transparent semiconductor, are fabricated and characterized. ®-BaCu2S2 has a transmittance of 60% to 80 % in the visible portion of the electromagnetic spectrum. The mobility, conductivity,...
Indium-gallium-zinc oxide (IGZO) and zinc-tin oxide (ZTO) are investigated for thin-film transistor (TFT) applications. Negative bias illumination stress (NBIS) is employed for electrical stability assessment. Unpassivated IGZO and ZTO TFTs suffer from severe NBIS instabilities. Zinc-tin-silicon oxide is found to be an effective passivation layer for IGZO and ZTO TFTs,...