Index Catalog // ScholarsArchive@OSU

Development and characterization of AlInN as an alternating-current thin-film electroluminescent display phosphor

Creator:: Mueller, Matthew R.
Resource Type:: Masters Thesis
Full Text:: AN ABSTRACT OF THE IliESIS OF Matthew R. Mueller for the degree

ACTFEL phosphor deposition by RF sputtering

Creator:: Ang, Wie Ming
Resource Type:: Masters Thesis
Full Text:: Privacy Abstract approved: Dr. John F. W ger In this thesis, a research program with the goal of

Electrical characterization of n-type aluminum gallium arsenide

Creator:: Kim, Seung-bae
Resource Type:: Dissertation
Full Text:: dislocation networks due to glide after processing with an optical power density of approximately 9 x 104 W

A study of deep levels of AlGaAs/GaAs heterojunction bipolar transistors

Creator:: Huang, Chun-ta
Abstract:: A study of deep levels of the emitter region of a heterojunction bipolar transistor is investigated using deep level transient spectroscopy (DLTS), deep level admittance spectroscopy (DLAS), thermally stimulated capacitance (TSCAP), and capacitance-voltage (C-V) profiling. The DX center, with an activation energy of 0.45 eV, is the only deep level...
Resource Type:: Masters Thesis
Full Text:: through out this work. Special thanks to Professor John R. Arthur, Professor Thomas K. Plant, and

Hot carrier degradation of sub-micron n-channel MOSFETs subject to static stress

Creator:: Aminzadeh, Payman G.
Abstract:: Hot carrier effects in sub-micron lightly doped drain (LDD) n-channel MOSFETs under static (DC) stress are studied in order to establish the degradation mechanisms of such devices. Degradation is monitored as a function of time at various gate voltages. Under accelerated aging conditions (i.e. large drain voltages) the gate voltage...
Resource Type:: Masters Thesis
Full Text:: support during the course of this study. I would like to thank Professors S. M. Goodnick, R. Schreier

Development of Amorphous Metal Thin Films for Thermal Inkjet Printing and Microelectronics

Creator:: McGlone, John M.
Abstract:: Due to a lack of grain boundaries, an amorphous metal thin film (AMTF) possesses advantageous mechanical properties and enhanced chemical stability that is potentially useful for thermal inkjet (TIJ) printing applications. The use of an AMTF as a TIJ resistor or cavitation plate could lead to a thinner TIJ cavitation...
Resource Type:: Dissertation
Full Text:: 200 nm deposited at 100 W RF power and 10 mTorr, and (b) a Ta thin film provided by HP Inc

Design, fabrication, and testing of inhomogeneous dielectrics

Creator:: Lim, Sungkyoo
Abstract:: In this thesis the concept of inhomogeneous dielectrics is demonstrated for various optical coating applications. Compositionally-varying silicon oxynitride (SiON) dielectric layers, with the refractive index varying as a function of position, are grown by computer-controlled plasma-enhanced chemical vapor deposition (PECVD) using silane, nitrogen, and nitrous oxide reactant gases. Compositionally graded...
Resource Type:: Dissertation
Full Text:: Professors Curtis R. Cook, Vijai K. Tripathi, Stephen M. Goodnick, and William Hetherington for serving on

Al-In-Sn-O thin-film transistors

Creator:: Stewart, Kevin A.
Abstract:: The aim of the research undertaken for this thesis was to develop a new high-performance amorphous oxide semiconductor (AOS) for use as a channel layer in a thin-film transistor (TFT). AOS TFTs offer higher electron mobility than the established amorphous silicon based technology. A new channel material comprised of aluminum...
Resource Type:: Masters Thesis
Full Text:: testing, work ing together to create a presentation of the research results every month as well as

Atomic solid state energy scale applied to novel thin-film solar absorbers

Creator:: Pelatt, Brian D.
Abstract:: The atomic solid state energy (SSE) scale is introduced as a tool for inorganic materials design. The SSE scale is obtained by assessing an average electron affinity (EA) (for a cation) or an average ionization potential (IP) (for an anion) for each atom using data from compounds having that specific...
Resource Type:: Dissertation
Full Text:: . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87 4.14 The high-frequency (optical) dielectric constant, ε∞R, as a function of ionicity for 108

Development of oxide semiconductors : materials, devices, and integration

Creator:: Chiang, Hai Q.
Abstract:: The aim of this dissertation is to develop oxide semiconductors by radio-frequency sputtering for thin-film transistor (TFT) applications. A variety of oxide semiconductors are used as the TFT channel layer, including indium gallium oxide (IGO), zinc tin oxide (ZTO), and indium gallium zinc oxide (IGZO). The variety of materials used...
Resource Type:: Dissertation
Full Text:: several values ofVG. This estimate of deple- tion width usesεs andCins of 8.85× 10−13 F/cm (εr =10) and

ScholarsArchive@OSU

Development and characterization of AlInN as an alternating-current thin-film electroluminescent display phosphor

ACTFEL phosphor deposition by RF sputtering

Electrical characterization of n-type aluminum gallium arsenide

A study of deep levels of AlGaAs/GaAs heterojunction bipolar transistors

Hot carrier degradation of sub-micron n-channel MOSFETs subject to static stress

Development of Amorphous Metal Thin Films for Thermal Inkjet Printing and Microelectronics

Design, fabrication, and testing of inhomogeneous dielectrics

Al-In-Sn-O thin-film transistors

Atomic solid state energy scale applied to novel thin-film solar absorbers

Development of oxide semiconductors : materials, devices, and integration

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