Index Catalog // ScholarsArchive@OSU

Thermally-stable amorphous metal thin films

Creator:: McGlone, John M.
Abstract:: Amorphous metal thin films (AMTFs) are of potential use for metal-insulator-metal (MIM) tunnel diode applications due to their ultra-smooth surfaces, a consequence of their amorphous microstructure. The objective of this thesis is to design a thermally-stable AMTF capable of maintaining MIM tunnel diode performance after a post-deposition anneal in excess...
Resource Type:: Masters Thesis
Full Text:: tunneling even after being subjected to a post-deposition anneal at 525 ◦C. c©Copyright by John M

Development of Amorphous Metal Thin Films for Thermal Inkjet Printing and Microelectronics

Creator:: McGlone, John M.
Abstract:: Due to a lack of grain boundaries, an amorphous metal thin film (AMTF) possesses advantageous mechanical properties and enhanced chemical stability that is potentially useful for thermal inkjet (TIJ) printing applications. The use of an AMTF as a TIJ resistor or cavitation plate could lead to a thinner TIJ cavitation...
Resource Type:: Dissertation
Full Text:: in order to demonstrate their potential for microelec- tronic applications. c©Copyright by John M

An n-sheet, state-space ACTFEL device model

Creator:: Hitt, John C.
Abstract:: The objective of the research presented in this thesis is to develop, implement, and demonstrate the utility of an n-sheet, state-space alternating-current thin-film electroluminescent (ACTFEL) device model. In this model, the phosphor layer is discretized into n + 1 layers, with band-to-band impact ionization, space charge creation/ annihilation, and luminescent...
Resource Type:: Dissertation
Full Text:: THE DISSERTATION OF John C. Hitt for the degree of Doctor of Philosophy in Electrical & Computer

Static space charge in evaporated ZnS:Mn alternating-current thin-film electroluminescent devices

Creator:: Hitt, John C.
Resource Type:: Masters Thesis
Full Text:: thin-film electroluminescent devices AN ABSTRACT OF THE THESIS OF John C. Hitt for the degree of

Contact resistance and stability assessment of oxide-based thin film transistors

Creator:: Hung, Celia M.
Abstract:: This thesis focuses on two aspects of oxide-based thin-film transistors (TFTs), contact resistance and instability assessment. First, determination of the contact resistance of indium tin oxide (ITO) on two wide-band gap semiconductors, zinc oxide (ZnO) and indium gallium oxide (IGO), is attempted and the effects of contact resistance on device...
Resource Type:: Masters Thesis
Full Text:: after post-deposition annealing at a temperature of ~ 600 °C for ZnO and IGO TFTs, and ~ 400 °C for

Novel phosphor development for alternating-current thin-film electroluminescent devices

Creator:: Maddix, Crystal M.
Resource Type:: Masters Thesis
Full Text:: Electroluminescent Devices AN ABSTRACT OF THE THESIS OFAN ABSTRACT OF THE THESIS OF Crystal M. Maddix for the

Internal charge-phosphor field analysis, electrical characterization, and aging studies of AC thin-film electroluminescent devices

Creator:: Abu-Dayah, Ahmad I.
Resource Type:: Masters Thesis
Full Text:: monitored via the Q-FP and capacitance-voltage (C V) techniques. Changes in Vraax lead to the largest

Hot carrier degradation of sub-micron n-channel MOSFETs subject to static stress

Creator:: Aminzadeh, Payman G.
Abstract:: Hot carrier effects in sub-micron lightly doped drain (LDD) n-channel MOSFETs under static (DC) stress are studied in order to establish the degradation mechanisms of such devices. Degradation is monitored as a function of time at various gate voltages. Under accelerated aging conditions (i.e. large drain voltages) the gate voltage...
Resource Type:: Masters Thesis
Full Text:: support during the course of this study. I would like to thank Professors S. M. Goodnick, R. Schreier

Design, fabrication, and testing of inhomogeneous dielectrics

Creator:: Lim, Sungkyoo
Abstract:: In this thesis the concept of inhomogeneous dielectrics is demonstrated for various optical coating applications. Compositionally-varying silicon oxynitride (SiON) dielectric layers, with the refractive index varying as a function of position, are grown by computer-controlled plasma-enhanced chemical vapor deposition (PECVD) using silane, nitrogen, and nitrous oxide reactant gases. Compositionally graded...
Resource Type:: Dissertation
Full Text:: approximately 14 % compared to that of a conventional ACTFEL structure. c Copyright by Sungkyoo Lim May 6

Low-cost deposition methods for transparent thin-film transistors

Creator:: Norris, Benjamin J.
Abstract:: The objective of this dissertation is to introduce low-cost processing methods for the fabrication of ZnO transparent thin-film transistors (TTFTs). A novel method for depositing ZnO body layers via spin-coating of a zinc nitrate-based spin solution is presented. The processing conditions of spin-coated ZnO are optimized to produce continuous and...
Resource Type:: Dissertation
Full Text:: -coated ZnO thin-films are obtained for a 32 nm thick film which is converted to ZnO at 600◦C in air

ScholarsArchive@OSU

Thermally-stable amorphous metal thin films

Development of Amorphous Metal Thin Films for Thermal Inkjet Printing and Microelectronics

An n-sheet, state-space ACTFEL device model

Static space charge in evaporated ZnS:Mn alternating-current thin-film electroluminescent devices

Contact resistance and stability assessment of oxide-based thin film transistors

Novel phosphor development for alternating-current thin-film electroluminescent devices

Internal charge-phosphor field analysis, electrical characterization, and aging studies of AC thin-film electroluminescent devices

Hot carrier degradation of sub-micron n-channel MOSFETs subject to static stress

Design, fabrication, and testing of inhomogeneous dielectrics

Low-cost deposition methods for transparent thin-film transistors

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