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Internal charge-phosphor field analysis, electrical characterization, and aging studies of AC thin-film electroluminescent devices

Creator:: Abu-Dayah, Ahmad I.
Resource Type:: Masters Thesis
Full Text:: Internal charge-phosphor field analysis, electrical

ACTFEL device simulation with impact ionization using a two-sheet charge model

Creator:: Bouchard, Anthony F.
Abstract:: The main achievement of this thesis is the development of a two-sheet charge simulation model with space charge creation by trap-to-band impact ionization to describe the electrical characteristics of alternating-current thin-film electroluminescent (ACTFEL) devices. The two-sheet charge model localizes all of the space charge in the phosphor region of an...
Resource Type:: Masters Thesis
Full Text:: capacitance-voltage ( C-V) and internal charge-phosphor field ( Q - Fp) overshoot than when space .charge is

Electro-optical characterization of SrS:Ce, SrS:Cu, and SrS:Cu,Ag alternating-current thin-film electroluminescent devices

Creator:: Grudzinsky, Arkady S.
Abstract:: The purpose of this thesis is to contribute to the understanding of SrS-based alternating-current thin-film electroluminescent (ACTFEL) device operation. Three main accomplishments serving this purpose are presented in this thesis. First, two new methods are developed for estimation of insulator capacitance in ACTFEL devices possessing a large amount of dynamic...
Resource Type:: Masters Thesis
Full Text:: - voltage (C- V) and internal charge- phosphor field (Qint- Fp) char acteristics are simulated using a two

Amorphous oxide semiconductors in circuit applications

Creator:: McFarlane, Brian Ross
Abstract:: The focus of this thesis is the investigation of thin-film transistors (TFTs) based on amorphous oxide semiconductors (AOSs) in two circuit applications. To date, circuits implemented with AOS-based TFTs have been primarily enhancement-enhancement inverters, ring oscillators based on these inverters operating at peak frequencies up to ~400 kHz, and two-transistor...
Resource Type:: Masters Thesis
Full Text:: integrated IZO-based TFTs fabricated to date are found to be conductive and exhibit no gate modulation

Electrical characterization and aging studies of green ZnS: Tb AC thin-film electroluminescent devices

Creator:: Kumar, Manoj, 1972-
Resource Type:: Masters Thesis
Full Text:: (C-V) Analysis 17 3.2.2: Charge-Voltage (Q-V) Technique 20 3.2.3: Internal-Charge Phosphor-Field (Q

Static space charge in evaporated ZnS:Mn alternating-current thin-film electroluminescent devices

Creator:: Hitt, John C.
Resource Type:: Masters Thesis
Full Text:: an examination of points A to B is that there is no change in the internal charge measured. This is

Development of oxide semiconductors : materials, devices, and integration

Creator:: Chiang, Hai Q.
Abstract:: The aim of this dissertation is to develop oxide semiconductors by radio-frequency sputtering for thin-film transistor (TFT) applications. A variety of oxide semiconductors are used as the TFT channel layer, including indium gallium oxide (IGO), zinc tin oxide (ZTO), and indium gallium zinc oxide (IGZO). The variety of materials used...
Resource Type:: Dissertation
Full Text:: semiconductor layer. IGZO-based TFTs with excellent stability are demonstrated, exhibiting almost no decrease

State space modeling of alternating-current thin-film electroluminescent devices

Creator:: Peery, Jeffrey B.
Resource Type:: Masters Thesis
Full Text:: , charge is transported across the device in only one direction and, assuming that no internal 11

Oxide phosphors deposited by activated reactive evaporation for ACTFEL device applications

Creator:: Yokoyama, Tomoe
Abstract:: The goal of this thesis study is to develop an activated reactive evaporation (ARE) system and to demonstrate its utility by fabricating-alternating current thin-film electroluminescent (ACTFEL) oxide phosphor devices. ARE entails evaporation in an activated gas. The main ARE system components are three thermal evaporation sources, a microwave power supply,...
Resource Type:: Masters Thesis
Full Text:: contract No. DMR-9710207, and by Hewlett-Packard. TABLE OF CONTENTS Page 1 Introduction 1 2 ACTFEL

Modeling and development of p-type thin-film transistors

Creator:: Spiegelberg, Matthew Craig
Abstract:: The primary focus of this thesis involves modeling and development of p-type thin-film transistors (p-TFTs), moving towards the realization of a filly transparent thin-film transistor (TTFT). The modeling portion of this thesis emphasizes the development of physics-based TFT models, specifically focusing on the elucidation of non-ideal current-voltage characteristic behavior. A...
Resource Type:: Masters Thesis
Full Text:: -layer model in order to model non-ideal source/drain contacts. To date, there has been no report of a

ScholarsArchive@OSU

Internal charge-phosphor field analysis, electrical characterization, and aging studies of AC thin-film electroluminescent devices

ACTFEL device simulation with impact ionization using a two-sheet charge model

Electro-optical characterization of SrS:Ce, SrS:Cu, and SrS:Cu,Ag alternating-current thin-film electroluminescent devices

Amorphous oxide semiconductors in circuit applications

Electrical characterization and aging studies of green ZnS: Tb AC thin-film electroluminescent devices

Static space charge in evaporated ZnS:Mn alternating-current thin-film electroluminescent devices

Development of oxide semiconductors : materials, devices, and integration

State space modeling of alternating-current thin-film electroluminescent devices

Oxide phosphors deposited by activated reactive evaporation for ACTFEL device applications

Modeling and development of p-type thin-film transistors

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