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Filtering by: Creator Kim, Do Jin Remove constraint Creator: Kim, Do Jin Advisor Wager, John F. Remove constraint Advisor: Wager, John F.

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  • Electrical characterization of n-type aluminum gallium arsenide

    Creator:
    Kim, Seung-bae
    Resource Type:
    Dissertation
    Full Text:
    arsenide AN ABSTRACT OF THE THESIS OF Seung-Bae Kim for the degree of Doctor of Philosophy in

  • Assessment of High Mobility Oxide Thin-Film Transistors

    Creator:
    Stewart, Kevin A.
    Abstract:
    The trend towards higher resolution, faster refresh rate active-matrix liquid-crystal displays (AMLCDs) as well as the emergence of active-matrix organic light-emitting diode (AMOLED) displays is driving the demand for amorphous oxide semiconductor thin-film transistors (AOS TFTs) with higher mobility. A physics-based model for carrier transport in an amorphous semiconductor is...
    Resource Type:
    Dissertation

  • DC/AC Stability of In-Ga-Zn-O Thin-Film Transistors

    Creator:
    Zhou, Fan
    Abstract:
    The electrical stability of amorphous indium-gallium-zinc oxide (a-IGZO) thinfilmtransistors (TFTs) is investigated for flat-panel display applications. Althoughproducts incorporating a-IGZO TFT backplanes are already commercially available,e.g., iMac with 5K retina display, technical challenges need to be addressed for nextgenerationapplications, e.g., active-matrix organic light-emitting diode displays.Device stability is one crucial issue. The...
    Resource Type:
    Dissertation

  • Novel ACTFEL phosphor development

    Creator:
    Ang, Wie Ming
    Abstract:
    The goal of this thesis is to identify and to explore novel ACTFEL phosphor materials. Several important materials properties relevant to ACTFEL phosphor development are identified. All of these properties cannot be obtained simultaneously. Therefore, several key phosphor materials properties are identified as critical to the development of an ACTFEL...
    Resource Type:
    Dissertation
    Full Text:
    using these materials do not show any significant charge transfer. Detailed analysis indicates that the

  • An n-sheet, state-space ACTFEL device model

    Creator:
    Hitt, John C.
    Abstract:
    The objective of the research presented in this thesis is to develop, implement, and demonstrate the utility of an n-sheet, state-space alternating-current thin-film electroluminescent (ACTFEL) device model. In this model, the phosphor layer is discretized into n + 1 layers, with band-to-band impact ionization, space charge creation/ annihilation, and luminescent...
    Resource Type:
    Dissertation
    Full Text:
    excitation/do-excitation occurring only at n sheets between the n + 1 layers. The state-space technique is a

  • Fabrication and characterization of thin-film transistor materials and devices

    Creator:
    Hong, David
    Abstract:
    A class of inorganic thin-film transistor (TFT) semiconductor materials has emerged involving oxides composed of post-transitional cations with (n-1)d¹⁰ns⁰ (n≥4) electronic configurations. This thesis is devoted to the pursuit of topics involving the development of these materials for TFT applications: Deposition of zinc oxide and zinc tin oxide semiconductor layers...
    Resource Type:
    Dissertation
    Full Text:
    ) C dO 2. 2- 2. 6 75 0. 18 -0 .2 5 22 0 10 19 -1 02 1 2x 10 −3 [3 1, 36 ] C uA lO 3. 49

  • Amorphous oxide semiconductors in circuit applications

    Creator:
    McFarlane, Brian Ross
    Abstract:
    The focus of this thesis is the investigation of thin-film transistors (TFTs) based on amorphous oxide semiconductors (AOSs) in two circuit applications. To date, circuits implemented with AOS-based TFTs have been primarily enhancement-enhancement inverters, ring oscillators based on these inverters operating at peak frequencies up to ~400 kHz, and two-transistor...
    Resource Type:
    Masters Thesis
    Full Text:
    channel layers date back to 1964 and 1968, respectively, but these initial reports either do not include

  • Investigation of ultra-thin In-Ga-Zn-O thin-film transistors

    Creator:
    Chiang, Tsung-Han
    Abstract:
    The objective of the work reported herein is to explore the impact of decreasing channel thickness on radio-frequency (RF) sputtered amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) electrical performance through the evaluation of drain current versus gate voltage (I[subscript D] − V[subscript G]) transfer curves. For a fixed set of...
    Resource Type:
    Masters Thesis

  • Ferroelectric thin film development

    Creator:
    Harman, Taran V.
    Abstract:
    The long-term goal of the research project initiated with this thesis is the development of lead-free, fully-transparent ferroelectric devices, such as ferroelectric capacitors or ferroelectric-gate field-effect transistors. Ferroelectric materials exhibit spontaneous polarization with the application of an external electric field, which is persistent upon removal of the applied field, and...
    Resource Type:
    Masters Thesis
    Full Text:
    saturates when the entire sample becomes one domain. When the field is removed, the domains do not go back

  • Nontraditional amorphous oxide semiconductor thin-film transistor fabrication

    Creator:
    Sundholm, Eric Steven
    Abstract:
    Fabrication techniques and process integration considerations for amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) constitute the central theme of this dissertation. Within this theme three primary areas of focus are pursued. The first focus involves formulating a general framework for assessing passivation. Avoiding formation of an undesirable backside accumulation layer...
    Resource Type:
    Dissertation