Index Catalog // ScholarsArchive@OSU

Characterization of solution-based inorganic semiconductor and dielectric materials for inkjet printed electronics

Creator:: Munsee, Craig L.
Abstract:: The long-term goal of this research project is the development of solution-based inorganic dielectric and semiconductor materials for inkjet printed electronics. The main focus of this thesis involves testing of the materials and devices under development. A new solution-based inorganic dielectric material (HfOSO₄), given the name hafsox, is developed and...
Resource Type:: Masters Thesis
Full Text:: AN ABSTRACT OF THE THESIS OF Craig L. Munsee for the degree of

Development, fabrication, and characterization of transparent electronic devices

Creator:: Hoffman, Randy L.
Abstract:: The objective of this thesis is to provide an initial demonstration of the feasibility of constructing highly transparent active electronic devices. Such a demonstration is successfully achieved in the fabrication of ZnO-based thin film transistors (TFTs) exhibiting transparency greater than ~90% in the visible portion of the electromagnetic spectrum and...
Resource Type:: Masters Thesis
Full Text:: AN ABSTRACT OF THE THESIS OF Randy L. Hoffman for the degree of

Alternating-current thin-film electroluminescent device fabrication and characterization

Creator:: Baukol, Beau
Resource Type:: Dissertation
Full Text:: ...... 11 2.5 A luminance-voltage (L-V) curve for an ALE ZnS:Mn ACTFEL de- vice driven by a 60 Hz bipolar

Al-In-Sn-O thin-film transistors

Creator:: Stewart, Kevin A.
Abstract:: The aim of the research undertaken for this thesis was to develop a new high-performance amorphous oxide semiconductor (AOS) for use as a channel layer in a thin-film transistor (TFT). AOS TFTs offer higher electron mobility than the established amorphous silicon based technology. A new channel material comprised of aluminum...
Resource Type:: Masters Thesis
Full Text:: drain current of a FET is equal to W V 2 IDS = µ COX (VGS − VON )VDS − DS , (2.1) L 2 where µ is

Electro-optical characterization of SrS:Ce, SrS:Cu, and SrS:Cu,Ag alternating-current thin-film electroluminescent devices

Creator:: Grudzinsky, Arkady S.
Abstract:: The purpose of this thesis is to contribute to the understanding of SrS-based alternating-current thin-film electroluminescent (ACTFEL) device operation. Three main accomplishments serving this purpose are presented in this thesis. First, two new methods are developed for estimation of insulator capacitance in ACTFEL devices possessing a large amount of dynamic...
Resource Type:: Masters Thesis
Full Text:: . . . . . . . . . . . . . . . . . . . 77 4.18. Normalized Qmax- Vmax (a), L- Vmax (b), and luminous effi ciency (c) of a SrS:Ce ACTFEL

Numerical simulation of Al [subscript x] Ga [subscript 1-x] As/GaAs and (Al [subscript x] Ga [subscript 1-x]) [subscript 0.47] In [subscript 0.53] As/InP bandgap engineered solar cells

Creator:: Kamdar, Pravin P.
Resource Type:: Masters Thesis
Full Text:: + G= 0 (2-23) q ax ay 2 2 a 4) a ip - l(aLp a aip aE) ax a 2 2 E E aX aX ay ay y (2-24) In the

Electronic Conduction Mechanisms in Insulators

Creator:: Chiang, Tsung-Han
Abstract:: The research presented herein focuses on electrical assessment of oxide thin films as insulators. The current density-electric field (J-E) characteristics of four insulators of dramatically different electrical quality are assessed in terms of their operative electronic conduction mechanisms. Conduction in the two high-quality insulators is dominated by Ohmic conduction and...
Resource Type:: Dissertation

Novel phosphor development for alternating-current thin-film electroluminescent devices

Creator:: Maddix, Crystal M.
Resource Type:: Masters Thesis
Full Text:: eye is 6/3/l. Very aggressive brightness goals for full color ACTFEL devices were set forth by S

Fabrication and characterization of ACTFEL devices

Creator:: Keir, Paul D.
Abstract:: The goal of this thesis is the identification and synthesis of high-luminance, primary color alternating-current thin-film electroluminescent (ACTFEL) devices. Special attention is paid to the synthesis of primary color green ACTFEL devices because of the lack of an adequate primary green ACTFEL phosphor and the dominance of green wavelengths in...
Resource Type:: Dissertation
Full Text:: ALE.................... 34 2.8 A L-V curve from an evaporated ZnS:Mn ACTFEL device driven by a 1 kHz

Development of Amorphous Metal Thin Films for Thermal Inkjet Printing and Microelectronics

Creator:: McGlone, John M.
Abstract:: Due to a lack of grain boundaries, an amorphous metal thin film (AMTF) possesses advantageous mechanical properties and enhanced chemical stability that is potentially useful for thermal inkjet (TIJ) printing applications. The use of an AMTF as a TIJ resistor or cavitation plate could lead to a thinner TIJ cavitation...
Resource Type:: Dissertation
Full Text:: of initial cavitation, and (l) the end of cavitation

ScholarsArchive@OSU

Characterization of solution-based inorganic semiconductor and dielectric materials for inkjet printed electronics

Development, fabrication, and characterization of transparent electronic devices

Alternating-current thin-film electroluminescent device fabrication and characterization

Al-In-Sn-O thin-film transistors

Electro-optical characterization of SrS:Ce, SrS:Cu, and SrS:Cu,Ag alternating-current thin-film electroluminescent devices

Numerical simulation of Al [subscript x] Ga [subscript 1-x] As/GaAs and (Al [subscript x] Ga [subscript 1-x]) [subscript 0.47] In [subscript 0.53] As/InP bandgap engineered solar cells

Electronic Conduction Mechanisms in Insulators

Novel phosphor development for alternating-current thin-film electroluminescent devices

Fabrication and characterization of ACTFEL devices

Development of Amorphous Metal Thin Films for Thermal Inkjet Printing and Microelectronics

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