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Numerical simulation of Al [subscript x] Ga [subscript 1-x] As/GaAs and (Al [subscript x] Ga [subscript 1-x]) [subscript 0.47] In [subscript 0.53] As/InP bandgap engineered solar cells

Creator:: Kamdar, Pravin P.
Resource Type:: Masters Thesis
Full Text:: of Science in Electrical and Computer Engineering presented on May 11, 1990. Title: Numerical

Diamond-like carbon films for electroluminescent applications

Creator:: Kim, Seung-bae
Abstract:: White electroluminescence (EL) was observed for the first time from diamond-like carbon (DLC) films at room temperature. Electroluminescence was observed by the application of ac voltages in excess of 200 V to a metal-insulator- semiconductor (i.e. DLC)-insulator-metal (MISIM) device structure. For EL applications, three types of the DLC films were...
Resource Type:: Masters Thesis
Full Text:: 1985. 2.1 Nomenclature There seems to be no standard name for diamond-like carbon; which has also

Development of oxide semiconductors : materials, devices, and integration

Creator:: Chiang, Hai Q.
Abstract:: The aim of this dissertation is to develop oxide semiconductors by radio-frequency sputtering for thin-film transistor (TFT) applications. A variety of oxide semiconductors are used as the TFT channel layer, including indium gallium oxide (IGO), zinc tin oxide (ZTO), and indium gallium zinc oxide (IGZO). The variety of materials used...
Resource Type:: Dissertation
Full Text:: semiconductor layer. IGZO-based TFTs with excellent stability are demonstrated, exhibiting almost no decrease

Amorphous oxide semiconductors in circuit applications

Creator:: McFarlane, Brian Ross
Abstract:: The focus of this thesis is the investigation of thin-film transistors (TFTs) based on amorphous oxide semiconductors (AOSs) in two circuit applications. To date, circuits implemented with AOS-based TFTs have been primarily enhancement-enhancement inverters, ring oscillators based on these inverters operating at peak frequencies up to ~400 kHz, and two-transistor...
Resource Type:: Masters Thesis
Full Text:: integrated IZO-based TFTs fabricated to date are found to be conductive and exhibit no gate modulation

Static space charge in evaporated ZnS:Mn alternating-current thin-film electroluminescent devices

Creator:: Hitt, John C.
Resource Type:: Masters Thesis
Full Text:: Projects Agency under the Phos phor Technology Center of Excellence, Grant No. MDA 972-91-1-0030

High resolution electroluminescent display using active matrix approach

Creator:: Khormaei, Iranpour
Resource Type:: Dissertation
Full Text:: on the user's viewing direction. This requirement appears to leave no practical solution other than a

DC/AC Stability of In-Ga-Zn-O Thin-Film Transistors

Creator:: Zhou, Fan
Abstract:: The electrical stability of amorphous indium-gallium-zinc oxide (a-IGZO) thinfilmtransistors (TFTs) is investigated for flat-panel display applications. Althoughproducts incorporating a-IGZO TFT backplanes are already commercially available,e.g., iMac with 5K retina display, technical challenges need to be addressed for nextgenerationapplications, e.g., active-matrix organic light-emitting diode displays.Device stability is one crucial issue. The...
Resource Type:: Dissertation
Full Text:: , in which no accumulation layer exists to conduct carriers; (2) Linear, pre-pinch-off. When VD is

Novel phosphor development for alternating-current thin-film electroluminescent devices

Creator:: Maddix, Crystal M.
Resource Type:: Masters Thesis
Full Text:: contract No. DMR-9710207. TABLE OF CONTENTS Page 1 Introduction 1 2 ACTFEL Fundamentals 3

Electronic Conduction Mechanisms in Insulators

Creator:: Chiang, Tsung-Han
Abstract:: The research presented herein focuses on electrical assessment of oxide thin films as insulators. The current density-electric field (J-E) characteristics of four insulators of dramatically different electrical quality are assessed in terms of their operative electronic conduction mechanisms. Conduction in the two high-quality insulators is dominated by Ohmic conduction and...
Resource Type:: Dissertation
Full Text:: with insulators that have no traps (red) or an exponential distribution of traps (green

Fabrication and characterization of thin-film transistor materials and devices

Creator:: Hong, David
Abstract:: A class of inorganic thin-film transistor (TFT) semiconductor materials has emerged involving oxides composed of post-transitional cations with (n-1)d¹⁰ns⁰ (n≥4) electronic configurations. This thesis is devoted to the pursuit of topics involving the development of these materials for TFT applications: Deposition of zinc oxide and zinc tin oxide semiconductor layers...
Resource Type:: Dissertation
Full Text:: United States Display Consortium, and the NSF (IGERT grant no. 0549503). To the optimist the glass is

ScholarsArchive@OSU

Numerical simulation of Al [subscript x] Ga [subscript 1-x] As/GaAs and (Al [subscript x] Ga [subscript 1-x]) [subscript 0.47] In [subscript 0.53] As/InP bandgap engineered solar cells

Diamond-like carbon films for electroluminescent applications

Development of oxide semiconductors : materials, devices, and integration

Amorphous oxide semiconductors in circuit applications

Static space charge in evaporated ZnS:Mn alternating-current thin-film electroluminescent devices

High resolution electroluminescent display using active matrix approach

DC/AC Stability of In-Ga-Zn-O Thin-Film Transistors

Novel phosphor development for alternating-current thin-film electroluminescent devices

Electronic Conduction Mechanisms in Insulators

Fabrication and characterization of thin-film transistor materials and devices

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