The objective of this thesis is to provide an initial demonstration of the feasibility of constructing highly transparent active electronic devices. Such a demonstration is successfully achieved in the fabrication of ZnO-based thin film transistors (TFTs) exhibiting transparency greater than ~90% in the visible portion of the electromagnetic spectrum and...
The objective of this dissertation is to introduce low-cost processing methods for the fabrication of ZnO transparent thin-film transistors (TTFTs). A novel method for depositing ZnO body layers via spin-coating of a zinc nitrate-based spin solution is presented. The processing conditions of spin-coated ZnO are optimized to produce continuous and...
The aim of this dissertation is to develop non-traditional approaches to alternating-current thin-film electroluminescent (ACTFEL) device fabrication. ACTFEL technology suffers from a lack of adequately bright and efficient primary-color phosphors and cannot presently compete in the low-cost display market. Therefore the research presented in this dissertation focuses on an exploration...
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LIST OF FIGURES (Continued)
Figure Page
2.17 A family of L-V curves for an evaporated ZnS:Mn
A class of inorganic thin-film transistor (TFT) semiconductor materials has emerged involving oxides composed of post-transitional cations with (n-1)d¹⁰ns⁰ (n≥4) electronic configurations. This thesis is devoted to the pursuit of topics involving the development of these materials for TFT applications: Deposition of zinc oxide and zinc tin oxide semiconductor
layers...
The research presented herein focuses on electrical assessment of oxide thin films as insulators. The current density-electric field (J-E) characteristics of four insulators of dramatically different electrical quality are assessed in terms of their operative electronic conduction mechanisms. Conduction in the two high-quality insulators is dominated by Ohmic conduction and...
The focus of this thesis involves development of highly transparent, n-channel, accumulation- mode thin-film transistors employing a zinc tin oxide (ZTO) channel layer. ZTO-based transparent thin-film transistors (TTFTs) show improved device performance compared to ZnO-based TTFTs. An estimated peak effective mobility for these devices as high as ~100 cm² V⁻¹sec⁻¹...
The aim of this dissertation is to develop oxide semiconductors by radio-frequency
sputtering for thin-film transistor (TFT) applications. A variety of oxide semiconductors
are used as the TFT channel layer, including indium gallium oxide (IGO), zinc tin
oxide (ZTO), and indium gallium zinc oxide (IGZO). The variety of materials used...
The long-term goal of the research project initiated with this thesis is the development of lead-free, fully-transparent ferroelectric devices, such as ferroelectric capacitors or ferroelectric-gate field-effect transistors. Ferroelectric materials exhibit spontaneous polarization with the application of an external electric field, which is persistent upon removal of the applied field, and...
CIGS and CdTe based commercial thin-film solar cells (TFSCs) require an absorber thickness greater than 2 µm and 4 µm, respectively, to adequately absorb the solar spectrum. To efficiently extract photoexcited electrons, these TFSCs require relatively defect-free absorbers with high-minority carrier mobility (> 100 cm2V−1s−1) and long lifetime (> 10...