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Filtering by: Contributor advisor sim Forbes, Leonard Date issued sim 1988-04-25

Recombination and generation lifetime characterization of p/p⁺ epitaxial silicon wafers

Creator:

Aminzadeh, Mehran G.

Abstract:

The refresh times of all dynamic charge storage devices, best characterized by the generation lifetime at roan temperature and the recombination lifetime at higher device operating temperatures (T>70°C), strongly influence the efficient and successful operation of dynamic charge storage devices such as DRAM's and CCD's. Both recombination and generation lifetime...

Resource Type:

Dissertation