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Filtering by: Creator Ohm, Robin A. Remove constraint Creator: Ohm, Robin A. Contributor advisor sim Looney, James C. Remove constraint Contributor advisor sim: Looney, James C.

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  • Influence of surface fields on shallow planar-junction breakdown voltages

    Creator:
    Kim, Sŭng-yŏng
    Abstract:
    The influence of surface fields on the breakdown voltage is studied experimentally for p⁺-n silicon diodes with a junction depth of 0.5μ in order to improve the curvature- limited breakdown of the diffused, shallow-collector junction of a microwave transistor. Devices with a gap in the gate metal electrode are also...
    Resource Type:
    Masters Thesis
    Full Text:
    higher for a circular diode by 3% for 1 ohm-cm and 6% for 5 ohm-cm substrates. For a high-voltage

  • Vacuum-deposited aluminum-oxide MOS transistors

    Creator:
    Hwang, Yun-sheng
    Abstract:
    The properties of evaporated aluminum-oxide films were investigated. The characteristics of MOS devices made with single-layer aluminum-oxide films and double-layer films which were made by evaporating aluminum oxide over thermally-grown silicon dioxide as gate insulation have been investigated. Vacuum-evaporated aluminum oxide has features which are suitable for fabricating MOS devices....
    Resource Type:
    Masters Thesis
    Full Text:
    - cated on one ohm-cm n-type (111) silicon wafers. Auto- matic display and plotting equipment were used

  • Properties of flash-evaporated gallium arsenide and gallium phosphide epitaxial films

    Creator:
    Matsuo, Samuel Seiji
    Abstract:
    The properties of flash- evaporated films of GaAs and GaP were studied in this investigation. Films were grown at various substrate temperatures, source temperatures, source-to-substrate distances and rates of deposition and were evaluated as to their structural, optical and electric properties. It was found that substrate temperature was the major...
    Resource Type:
    Dissertation
    Full Text:
    of 6x10 -3 ohm -cm to 0.01 ohm -cm material had very high resistivities. To lower film resistivity

  • Metal-to-gallium arsenide contact evaluation using a VHF bridge technique

    Creator:
    Armantrout, G. A.
    Abstract:
    In this paper, the theory of metal-semiconductor contacts was applied to metal contacts on gallium arsenide. A model was discussed which proposed that the contact resistance was due to a highly resistive region between the metal and the semiconductor. In order to evaluate this resistance, a technique using a VHF...
    Resource Type:
    Masters Thesis
    Full Text:
    polarity up to about ten volts. A sample of O. 1 ohm -cm N -type gallium arsenide was checked with one

  • Thermal growth and chemical etching of silicon dioxide film

    Creator:
    Mai, Chao Chen
    Abstract:
    Some important factors that affect the dimensional control of oxide films on silicon were studied. Both N- and P-type silicon with resistivities in the range of 0.014 to 200 ohm-cm and a (111) surface orientation were employed in this experiment. The etching rates of silicon dioxide in hydrofluoric acid (111)...
    Resource Type:
    Masters Thesis
    Full Text:
    range of 0.014 to 200 ohm -cm and a (111) surface orientation were employed in this experiment. The

  • The MOS tetrode transistor

    Creator:
    Limvorapun, Thawee
    Abstract:
    The MOS tetrode transistor is studied in this project. This device is ideally suited for high frequency and switching application. In effect it is the solid state analogy of a multigrid vacuum tube performing a very useful multigrid function. A new structure is developed for p-channel 10 ohm-cm. silicon substrate...
    Resource Type:
    Masters Thesis
    Full Text:
    of a 10 ohm-cm. n-type silicon wafer, with (111) crystal orien- tation. The pyrolytic SiO2 process

  • A low power zone-refining system for semiconductor materials

    Creator:
    Christensen, Gerald Albert
    Abstract:
    This paper presents an investigation of the power needs and impedance-matching techniques involved when heating small charges of relatively high-resistivity semiconductor materials. Topics of discussion also include a brief section on the theoretical basis for zone refining, relative merits of resistance and induction heating, travel mechanism requirements, and work coil...
    Resource Type:
    Masters Thesis
    Full Text:
    to be ,001 ohm-cm or 7.91 x I05 cps if we assume p to be ,01, Because it is necessary to have a

  • A MOS-transistor with submicron, and graded channel

    Creator:
    Chou, Pen Chao
    Abstract:
    The theoretical aspects and fabrication techniques of a new surface field-effect transistor were investigated. The new MOS-transistor uses a three-layer structure similar to those found in bipolar transistors. The new MOS structure introduces an impurity gradient in the channel region of the transistor and also makes it possible to reduce...
    Resource Type:
    Dissertation
    Full Text:
    A MOS-transistor with submicron, and graded channel AN

  • The high frequency performance of a Schottky diode detector

    Creator:
    Crane, Albert Sears
    Abstract:
    This paper analyzes the theory and performance of a Schottky barrier diode detector used over a frequency range extending from a few kilohertz into the gigahertz region. The process of large signal rectification is analyzed with the simplified detector circuit. Phenomena which can affect the rectification process at high frequencies,...
    Resource Type:
    Masters Thesis
    Full Text:
    package is placed between the center conductor and the outer wall of a 50 ohm coaxial line. The glass

  • Low level D-C detection using a photoconductive modulator

    Creator:
    Teien, Aage
    Resource Type:
    Masters Thesis
    Full Text:
    , has a 10W input resistance, in the order of 1 ohm. 20 microvolts terminated in 1. ohm gives an input