Index Catalog // ScholarsArchive@OSU

Numerical simulation of Al [subscript x] Ga [subscript 1-x] As/GaAs and (Al [subscript x] Ga [subscript 1-x]) [subscript 0.47] In [subscript 0.53] As/InP bandgap engineered solar cells

Creator:: Kamdar, Pravin P.
Resource Type:: Masters Thesis
Full Text:: . Kamdar A THESIS submitted to Oregon State University in partial fulfillment of the requirements for

A study of deep levels of AlGaAs/GaAs heterojunction bipolar transistors

Creator:: Huang, Chun-ta
Abstract:: A study of deep levels of the emitter region of a heterojunction bipolar transistor is investigated using deep level transient spectroscopy (DLTS), deep level admittance spectroscopy (DLAS), thermally stimulated capacitance (TSCAP), and capacitance-voltage (C-V) profiling. The DX center, with an activation energy of 0.45 eV, is the only deep level...
Resource Type:: Masters Thesis
Full Text:: Oregon State University in partial fulfillment of the requirements for the degree of Master of

Electrical characterization of n-type aluminum gallium arsenide

Creator:: Kim, Seung-bae
Resource Type:: Dissertation
Full Text:: submitted to Oregon State University in partial fulfillment of the requirements for the degree of Doctor

Internal charge-phosphor field analysis, electrical characterization, and aging studies of AC thin-film electroluminescent devices

Creator:: Abu-Dayah, Ahmad I.
Resource Type:: Masters Thesis
Full Text:: Devices by Ahmad I. Abu-Dayah A THESIS submitted to Oregon State University in partial fulfillment

Design, fabrication, and testing of inhomogeneous dielectrics

Creator:: Lim, Sungkyoo
Abstract:: In this thesis the concept of inhomogeneous dielectrics is demonstrated for various optical coating applications. Compositionally-varying silicon oxynitride (SiON) dielectric layers, with the refractive index varying as a function of position, are grown by computer-controlled plasma-enhanced chemical vapor deposition (PECVD) using silane, nitrogen, and nitrous oxide reactant gases. Compositionally graded...
Resource Type:: Dissertation
Full Text:: Sungkyoo Lim A THESIS submitted to Oregon State University in partial fulfillment of the requirements

Alternating-current thin-film electroluminescent device physics and modeling

Creator:: Douglas, Allan A.
Abstract:: Alternating-current thin-film electroluminescent (ACTFEL) devices are used in the formation of pixels in flat panel displays. ACTFEL flat panel displays have many advantages over other flat panel technologies. Specifically, ACTFEL panels are emissive displays, they have high brightness, wide viewing angles, and rugged construction. Although much is already known about...
Resource Type:: Masters Thesis
Full Text:: Device Physics and Modeling by Allan A. Douglas A THESIS submitted to Oregon State University in

Phosphor development for alternating-current thin-film electroluminescent applications

Creator:: Nguyen, Tin T.
Resource Type:: Masters Thesis
Full Text:: submitted to Oregon State University in partial fulfillment of the requirement for the degree of Master

Hot carrier degradation of sub-micron n-channel MOSFETs subject to static stress

Creator:: Aminzadeh, Payman G.
Abstract:: Hot carrier effects in sub-micron lightly doped drain (LDD) n-channel MOSFETs under static (DC) stress are studied in order to establish the degradation mechanisms of such devices. Degradation is monitored as a function of time at various gate voltages. Under accelerated aging conditions (i.e. large drain voltages) the gate voltage...
Resource Type:: Masters Thesis
Full Text:: G. Aminzadeh A THESIS submitted to Oregon State University in partial fulfillment of the

ACTFEL phosphor deposition by RF sputtering

Creator:: Ang, Wie Ming
Resource Type:: Masters Thesis
Full Text:: Deposition by RF Sputtering by e Ming An A THESIS submitted to Oregon State University in partial

Development and characterization of AlInN as an alternating-current thin-film electroluminescent display phosphor

Creator:: Mueller, Matthew R.
Resource Type:: Masters Thesis
Full Text:: . Mueller A THESIS submitted to Oregon State University in partial fulfillment of the requirements for

ScholarsArchive@OSU

Numerical simulation of Al [subscript x] Ga [subscript 1-x] As/GaAs and (Al [subscript x] Ga [subscript 1-x]) [subscript 0.47] In [subscript 0.53] As/InP bandgap engineered solar cells

A study of deep levels of AlGaAs/GaAs heterojunction bipolar transistors

Electrical characterization of n-type aluminum gallium arsenide

Internal charge-phosphor field analysis, electrical characterization, and aging studies of AC thin-film electroluminescent devices

Design, fabrication, and testing of inhomogeneous dielectrics

Alternating-current thin-film electroluminescent device physics and modeling

Phosphor development for alternating-current thin-film electroluminescent applications

Hot carrier degradation of sub-micron n-channel MOSFETs subject to static stress

ACTFEL phosphor deposition by RF sputtering

Development and characterization of AlInN as an alternating-current thin-film electroluminescent display phosphor

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