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Filtering by: Creator Al-Rabeh, Raed H. Remove constraint Creator: Al-Rabeh, Raed H. Contributor advisor sim Wager, John F. Remove constraint Contributor advisor sim: Wager, John F.

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  • Al-In-Sn-O thin-film transistors

    Creator:
    Stewart, Kevin A.
    Abstract:
    The aim of the research undertaken for this thesis was to develop a new high-performance amorphous oxide semiconductor (AOS) for use as a channel layer in a thin-film transistor (TFT). AOS TFTs offer higher electron mobility than the established amorphous silicon based technology. A new channel material comprised of aluminum...
    Resource Type:
    Masters Thesis
    Full Text:
    One of the first reports on AOSs was published by H. Hosono et al. in 1996 [23]. The oxides AgS bO3

  • Numerical simulation of Al [subscript x] Ga [subscript 1-x] As/GaAs and (Al [subscript x] Ga [subscript 1-x]) [subscript 0.47] In [subscript 0.53] As/InP bandgap engineered solar cells

    Creator:
    Kamdar, Pravin P.
    Resource Type:
    Masters Thesis
    Full Text:
    ,j g3 af3 af3 aPi,j ani,; awi,i al af1 aft api,H an i, J-1 avi, H g2 af2 af2= aPi,j -1 ani,j -1

  • Fabrication and characterization of thin-film transistor materials and devices

    Creator:
    Hong, David
    Abstract:
    A class of inorganic thin-film transistor (TFT) semiconductor materials has emerged involving oxides composed of post-transitional cations with (n-1)d¹⁰ns⁰ (n≥4) electronic configurations. This thesis is devoted to the pursuit of topics involving the development of these materials for TFT applications: Deposition of zinc oxide and zinc tin oxide semiconductor layers...
    Resource Type:
    Dissertation
    Full Text:
    , µ H re pr es en ts th e H al lm ob ili ty ,n re pr es en ts th e ca rr ie rc on ce nt

  • Inorganic thin-film solar cells

    Creator:
    Spies, Jack Alexander
    Abstract:
    The primary objective of this thesis is to explore new absorber and p-type window layer materials for thin-film solar cell applications. A new thin-film electron beam deposition system has been installed, is now operational, and has been used to deposit several types of solar cell absorber layers. Material investigations include...
    Resource Type:
    Masters Thesis
    Full Text:
    Contact hν (b) n+ p - p+ Figure 2.2: A simple pin solar cell. (a) An idealized pin solar cell

  • Development of high efficiency solar absorbers

    Creator:
    Ravichandran, Ram
    Abstract:
    Current cadmium telluride and copper indium gallium diselenide thin-film solar cells (TFSCs) utilize thick absorbers (2 - 4 μm). For efficient carrier extraction in these TFSCs, the absorber layer requires high carrier mobilities and a long minority carrier lifetime, which necessitates the use of a high purity, defect-free thin film....
    Resource Type:
    Dissertation
    Full Text:
    . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165 6.2 Tetrahedrites - Cu10M2Sb4Ch13 (M = Cu, Mn, Zn, Al, In; Ch = S, Se) . . . . 170 6.2.1

  • Investigation of ultra-thin In-Ga-Zn-O thin-film transistors

    Creator:
    Chiang, Tsung-Han
    Abstract:
    The objective of the work reported herein is to explore the impact of decreasing channel thickness on radio-frequency (RF) sputtered amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) electrical performance through the evaluation of drain current versus gate voltage (I[subscript D] − V[subscript G]) transfer curves. For a fixed set of...
    Resource Type:
    Masters Thesis
    Full Text:
    , I OFF D ) increases (decreases) with decreasing a-IGZO channel layer thickness (h) for h < 11 nm

  • Amorphous metal thin films as a platform for solution processing

    Creator:
    Landau, Nicholas P.
    Abstract:
    The research presented herein represents an effort to combine the ultra-smooth surface of an amorphous metal thin film (AMTF) with a solution-processed dielectric synthesized via prompt inorganic condensation (PIC). Analysis of dielectric film quality is carried out via electrical measurements of metal-insulator-metal (MIM) diodes. Anneals at 500 and 700 °C...
    Resource Type:
    Masters Thesis
    Full Text:
    . φB = barrier height. εi = insulator permittivity. k = Boltzmann’s constant. m∗ = effective mass. h̄

  • Diamond-like carbon films for electroluminescent applications

    Creator:
    Kim, Seung-bae
    Abstract:
    White electroluminescence (EL) was observed for the first time from diamond-like carbon (DLC) films at room temperature. Electroluminescence was observed by the application of ac voltages in excess of 200 V to a metal-insulator- semiconductor (i.e. DLC)-insulator-metal (MISIM) device structure. For EL applications, three types of the DLC films were...
    Resource Type:
    Masters Thesis
    Full Text:
    observed when a low optical pumping energy was used; these oscillations were attributed to C-H wagging

  • Instability and temperature-dependence assessment of IGZO TFTs

    Creator:
    Hoshino, Ken
    Abstract:
    Amorphous oxide semiconductors (AOSs) are of great current interest for thin-film transistor (TFT) channel layer applications. In particular, indium gallium zinc oxide (IGZO) is under intense development for commercial applications because of its demonstrated high performance at low processing temperatures. The objective of the research presented in this thesis is...
    Resource Type:
    Masters Thesis
    Full Text:
    conduction model suggested by Nomura, et al. [37], is shown. The bumpy surface represents the conduction

  • Development of oxide semiconductors : materials, devices, and integration

    Creator:
    Chiang, Hai Q.
    Abstract:
    The aim of this dissertation is to develop oxide semiconductors by radio-frequency sputtering for thin-film transistor (TFT) applications. A variety of oxide semiconductors are used as the TFT channel layer, including indium gallium oxide (IGO), zinc tin oxide (ZTO), and indium gallium zinc oxide (IGZO). The variety of materials used...
    Resource Type:
    Dissertation
    Full Text:
    Martins of the New University of Lisbon al- lowed me study with their research groups for several months