Index Catalog // ScholarsArchive@OSU

Contact resistance and stability assessment of oxide-based thin film transistors

Creator:: Hung, Celia M.
Abstract:: This thesis focuses on two aspects of oxide-based thin-film transistors (TFTs), contact resistance and instability assessment. First, determination of the contact resistance of indium tin oxide (ITO) on two wide-band gap semiconductors, zinc oxide (ZnO) and indium gallium oxide (IGO), is attempted and the effects of contact resistance on device...
Resource Type:: Masters Thesis
Full Text:: to 200 µm) are too large to yield an accurate estimate of the contact resistance, since it is so

High resolution electroluminescent display using active matrix approach

Creator:: Khormaei, Iranpour
Resource Type:: Dissertation
Full Text:: substrate. This integration of the display and the drivers removes the need for interconnects to each row

Numerical simulation of Al [subscript x] Ga [subscript 1-x] As/GaAs and (Al [subscript x] Ga [subscript 1-x]) [subscript 0.47] In [subscript 0.53] As/InP bandgap engineered solar cells

Creator:: Kamdar, Pravin P.
Resource Type:: Masters Thesis
Full Text:: collection of photogenerated carriers have the potential to yield higher efficiencies than conventional

Fabrication and characterization of ACTFEL devices

Creator:: Keir, Paul D.
Abstract:: The goal of this thesis is the identification and synthesis of high-luminance, primary color alternating-current thin-film electroluminescent (ACTFEL) devices. Special attention is paid to the synthesis of primary color green ACTFEL devices because of the lack of an adequate primary green ACTFEL phosphor and the dominance of green wavelengths in...
Resource Type:: Dissertation
Full Text:: yield a space charge distribution across the phosphor. [21] Furthermore, certain phosphor materials

Improved stability in ACTFEL devices

Creator:: Khormaei, Iranpour
Abstract:: The stability of ZnS:Mn AC thin film Electroluminescence (ACEFEL) devices as demonstrated by the brightness-voltage (BV) characteristics is discussed. Two procedures for improvement of the stability are demonstrated. The first method is the addition of a CaS buffer layer to one or both interfaces of the ZnS active phosphor layer....
Resource Type:: Masters Thesis
Full Text:: applied to each row starting frau the top of the display panel. immediately after applying the positive

Process development and modeling of thin-film transistors

Creator:: Hong, David
Abstract:: A class of high-performance thin-film transistor (TFT) channel materials has emerged involving oxides composed of heavy-metal cations (HMCs) with (n-1)d¹⁰ns⁰ (n≥4) electronic configurations. This thesis is devoted to the pursuit of three topics involving the development of these materials for TFT applications: modeling TFT currentvoltage characteristics, an exploratory method for...
Resource Type:: Masters Thesis
Full Text:: nitrogen cold trap. For the research described in this thesis, the Polaron is used for deposition of

Novel ACTFEL phosphor development

Creator:: Ang, Wie Ming
Abstract:: The goal of this thesis is to identify and to explore novel ACTFEL phosphor materials. Several important materials properties relevant to ACTFEL phosphor development are identified. All of these properties cannot be obtained simultaneously. Therefore, several key phosphor materials properties are identified as critical to the development of an ACTFEL...
Resource Type:: Dissertation
Full Text:: filled orbitals. The stability of half-filled orbitals yields a very large energy separation between the

Fabrication and characterization of thin-film transistor materials and devices

Creator:: Hong, David
Abstract:: A class of inorganic thin-film transistor (TFT) semiconductor materials has emerged involving oxides composed of post-transitional cations with (n-1)d¹⁰ns⁰ (n≥4) electronic configurations. This thesis is devoted to the pursuit of topics involving the development of these materials for TFT applications: Deposition of zinc oxide and zinc tin oxide semiconductor layers...
Resource Type:: Dissertation

Atomic solid state energy scale applied to novel thin-film solar absorbers

Creator:: Pelatt, Brian D.
Abstract:: The atomic solid state energy (SSE) scale is introduced as a tool for inorganic materials design. The SSE scale is obtained by assessing an average electron affinity (EA) (for a cation) or an average ionization potential (IP) (for an anion) for each atom using data from compounds having that specific...
Resource Type:: Dissertation

Amorphous oxide semiconductors in circuit applications

Creator:: McFarlane, Brian Ross
Abstract:: The focus of this thesis is the investigation of thin-film transistors (TFTs) based on amorphous oxide semiconductors (AOSs) in two circuit applications. To date, circuits implemented with AOS-based TFTs have been primarily enhancement-enhancement inverters, ring oscillators based on these inverters operating at peak frequencies up to ~400 kHz, and two-transistor...
Resource Type:: Masters Thesis

ScholarsArchive@OSU

Contact resistance and stability assessment of oxide-based thin film transistors

High resolution electroluminescent display using active matrix approach

Numerical simulation of Al [subscript x] Ga [subscript 1-x] As/GaAs and (Al [subscript x] Ga [subscript 1-x]) [subscript 0.47] In [subscript 0.53] As/InP bandgap engineered solar cells

Fabrication and characterization of ACTFEL devices

Improved stability in ACTFEL devices

Process development and modeling of thin-film transistors

Novel ACTFEL phosphor development

Fabrication and characterization of thin-film transistor materials and devices

Atomic solid state energy scale applied to novel thin-film solar absorbers

Amorphous oxide semiconductors in circuit applications

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