Search Constraints

Start Over
Filtering by: Subject Metal semiconductor field-effect transistors -- Noise Remove constraint Subject: Metal semiconductor field-effect transistors -- Noise Committee Member Alexander, Gerald C. Remove constraint Committee Member: Alexander, Gerald C. Non-Academic Affiliation Oregon State University. Graduate School Remove constraint Non-Academic Affiliation: Oregon State University. Graduate School

Search Results

  • Analysis and modeling of electrically long MESFETS and coupled schottky lines

    Creator:
    Mohammed, Ahmed Sarhan
    Abstract:
    The properties of linear active coupled lines consisting of electrically long GaAs MESFET structures are investigated for possible applications as traveling-wave broad-band amplifiers. In addition, the nonlinear coupled Schottky lines are studied for applications as voltage tunable circuit elements. The analysis of the general active asymmetric coupled transmission lines in...
    Resource Type:
    Dissertation
    Full Text:
    ): channel length (length of region I, II). MESFET Metal-Semiconductor Field-Effect Transistor. MOSFET