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Filtering by: Subject Ferroelectric thin films Remove constraint Subject: Ferroelectric thin films Committee Member Cann, David P. Remove constraint Committee Member: Cann, David P. Decade 2010-2019 Remove constraint Decade: 2010-2019

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  • Crystallization Rates of AIST and Ge Thin Films by Optical and Electron Microscopy

    Creator:
    Bird, Victoriea L.
    Abstract:
    The amorphous to crystalline phase change is of great interest for the production and operation of phase change memory and germanium electronic devices. Phase change memory relies on the ability to differentiate between differences in optical or electrical properties between the amorphous and crystalline phases of a single material. Amorphous...
    Resource Type:
    Masters Thesis
    Full Text:
    ................................................................................................................................................. 18  2.3.1  Amorphous germanium thin film applications

  • Al-In-Sn-O thin-film transistors

    Creator:
    Stewart, Kevin A.
    Abstract:
    The aim of the research undertaken for this thesis was to develop a new high-performance amorphous oxide semiconductor (AOS) for use as a channel layer in a thin-film transistor (TFT). AOS TFTs offer higher electron mobility than the established amorphous silicon based technology. A new channel material comprised of aluminum...
    Resource Type:
    Masters Thesis
    Full Text:
    Al-In-Sn-O Thin-Film Transistors AN ABSTRACT OF THE

  • Amorphous metal thin films as a platform for solution processing

    Creator:
    Landau, Nicholas P.
    Abstract:
    The research presented herein represents an effort to combine the ultra-smooth surface of an amorphous metal thin film (AMTF) with a solution-processed dielectric synthesized via prompt inorganic condensation (PIC). Analysis of dielectric film quality is carried out via electrical measurements of metal-insulator-metal (MIM) diodes. Anneals at 500 and 700 °C...
    Resource Type:
    Masters Thesis
    Full Text:
    herein represents an effort to combine the ultra-smooth sur- face of an amorphous metal thin film (AMTF

  • Chemical Solution Deposition and Advanced Characterization of Pb-free, Bi-based, Piezoelectric Thin Films

    Creator:
    Mason, Ashley D.
    Abstract:
    Piezoelectric materials convert mechanical strain into a dielectric displacement, as well as the converse, allowing these materials to be used as sensors, actuators, and transducers. Currently, lead zirconate titanate (PZT) is the primary material used in these applications. Due to environmental toxicity and safety concerns associated with Pb, development of...
    Resource Type:
    Dissertation
    Full Text:
    amplified in thin film processing. After successful fabrication, the dielectric, ferroelectric, and

  • Sputtered Pb(Zr0.52Ti0.48)O3 (PZT) thin films on copper foil substrates, Sputtered Pb(Zr₀.₅₂Ti₀.₄₈)O₃ (PZT) thin films on copper foil substrates

    Creator:
    Walenza-Slabe, Joel
    Abstract:
    Pb(Zr₀.₅₂Ti₀.₄₈)O₃ (PZT) thin films are of interest for their large dielectric permittivity, ferroelectric, and piezoelectric properties. The material has been widely studied for use in high frequency transducers, multi-layered capacitors, and ferroelectric random access memory. Copper foils are an inexpensive, flexible substrate with a low resistivity which makes them ideal...
    Resource Type:
    Masters Thesis
    Full Text:
    )O3 (PZT) thin films are of interest for their large dielectric permittivity, ferroelectric, and