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Filtering by: Subject Metal oxide semiconductor field-effect transistors Committee Member Cook, Curtis R. Decade 1980-1989

Analytical model of GaAs MESFET output conductance with frequency and temperature dependent parameters

Creator:

Lam, Steven C. F.

Abstract:

The output characteristics of a conventional GaAs depletion-mode MESFET device have been investigated. One of the important parameters of the small-signal GaAs MESFET model, g[subscript ds] (output conductance), is shown to be frequency and temperature dependent. Variations in g[subscript ds] are a serious problem in many analog and digital circuits...

Resource Type:

Masters Thesis

Full Text:

motion within a semiconductor crystal. For a long channel device, low field mobility serves as the