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Filtering by: Subject Ferroelectric thin films Remove constraint Subject: Ferroelectric thin films Committee Member Keszler, Douglas A. Remove constraint Committee Member: Keszler, Douglas A. Decade 2010-2019 Remove constraint Decade: 2010-2019

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  • New luminescent materials and high-performance solution-processed oxide thin films

    Creator:
    Jiang, Kai
    Abstract:
    Crystals of an incongruent-melting compound, Ba₃MgSi₂O₈, were grown by the flux method and its structure was determined by single crystal X-ray diffraction methods. Ba₃MgSi₂O₈ crystallizes in trigonal space group P-3[bar]m1 with a = 5.6123(3) Å, c = 7.2667(9) Å and Z = 1. Eu²⁺ ions prefer one crystallographic Ba site...
    Resource Type:
    Dissertation
    Full Text:
    , microcavities, capacitors, and thin-film transistors (TFTs). The control over film thickness to a single

  • Al-In-Sn-O thin-film transistors

    Creator:
    Stewart, Kevin A.
    Abstract:
    The aim of the research undertaken for this thesis was to develop a new high-performance amorphous oxide semiconductor (AOS) for use as a channel layer in a thin-film transistor (TFT). AOS TFTs offer higher electron mobility than the established amorphous silicon based technology. A new channel material comprised of aluminum...
    Resource Type:
    Masters Thesis
    Full Text:
    Al-In-Sn-O Thin-Film Transistors AN ABSTRACT OF THE

  • Atomic solid state energy scale applied to novel thin-film solar absorbers

    Creator:
    Pelatt, Brian D.
    Abstract:
    The atomic solid state energy (SSE) scale is introduced as a tool for inorganic materials design. The SSE scale is obtained by assessing an average electron affinity (EA) (for a cation) or an average ionization potential (IP) (for an anion) for each atom using data from compounds having that specific...
    Resource Type:
    Dissertation
    Full Text:
    : Atomic Solid State Energy Scale Applied to Novel Thin-Film Solar Absorbers Abstract approved: John F

  • Development of high efficiency solar absorbers

    Creator:
    Ravichandran, Ram
    Abstract:
    Current cadmium telluride and copper indium gallium diselenide thin-film solar cells (TFSCs) utilize thick absorbers (2 - 4 μm). For efficient carrier extraction in these TFSCs, the absorber layer requires high carrier mobilities and a long minority carrier lifetime, which necessitates the use of a high purity, defect-free thin film....
    Resource Type:
    Dissertation
    Full Text:
    and copper indium gallium diselenide thin-film solar cells (TFSCs) utilize thick absorbers (2 - 4 µm

  • Fabrication process assessment and negative bias illumination stress study of IGZO and ZTO TFTs

    Creator:
    Hoshino, Ken
    Abstract:
    Indium-gallium-zinc oxide (IGZO) and zinc-tin oxide (ZTO) are investigated for thin-film transistor (TFT) applications. Negative bias illumination stress (NBIS) is employed for electrical stability assessment. Unpassivated IGZO and ZTO TFTs suffer from severe NBIS instabilities. Zinc-tin-silicon oxide is found to be an effective passivation layer for IGZO and ZTO TFTs,...
    Resource Type:
    Dissertation
    Full Text:
    for thin-film transistor (TFT) applications. Negative bias illumination stress (NBIS) is employed

  • Solution-based nanomaterials and thin films for next generation electronics

    Creator:
    Oleksak, Richard P.
    Abstract:
    Nanomaterials are expected to enable significant advances in several technological fields in coming years. Among them, electronics has emerged as one of the most likely benefactors from the ability to control matter on the nanometer-scale. For many electronic devices synthesized nanomaterials must be integrated into thin film structures. Vapor-based deposition...
    Resource Type:
    Dissertation
    Full Text:
    devices synthesized nanomaterials must be integrated into thin film structures. Vapor-based deposition