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Filtering by: Alternative title ssim Conduction processes in metal–insulator–metal diodes with Ta2O5 and Nb2O5 insulators deposited by atomic layer deposition Remove constraint Alternative title ssim: Conduction processes in metal–insulator–metal diodes with Ta2O5 and Nb2O5 insulators deposited by atomic layer deposition Committee Member Keszler, Douglas A. Remove constraint Committee Member: Keszler, Douglas A.

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  • Investigation of metal-insulator-metal (MIM) and nanolaminate barrier MIIM tunnel devices fabricated via atomic layer deposition

    Creator:
    Alimardani, Nasir
    Abstract:
    Metal-insulator-metal (MIM) tunnel devices have been proposed for high speed applications such as hot electron transistors, IR detectors, optical rectennas for IR energy harvesting, and backplanes for LCDs. The majority of these applications require highly asymmetric and non-linear current versus voltage (I-V) behavior at low applied voltages and ultra-high frequencies....
    Resource Type:
    Dissertation
    Full Text:
    Diodes with Ta2O5 and Nb2O5 Dielectrics Deposited by Atomic Layer Deposition

  • Thermally-stable amorphous metal thin films

    Creator:
    McGlone, John M.
    Abstract:
    Amorphous metal thin films (AMTFs) are of potential use for metal-insulator-metal (MIM) tunnel diode applications due to their ultra-smooth surfaces, a consequence of their amorphous microstructure. The objective of this thesis is to design a thermally-stable AMTF capable of maintaining MIM tunnel diode performance after a post-deposition anneal in excess...
    Resource Type:
    Masters Thesis
    Full Text:
    estimated by taking the difference of φB2 from the as-deposited ZrCuAlNi diode (shown in Fig. 5.3 (c)) and

  • Development and Applications of Oxide Thin Films using Atomic Layer Deposition and Prompt Inorganic Condensation

    Creator:
    Smith, Sean Weston
    Abstract:
    In the first part of this work, thin films of Al₂O₃ deposited via atomic layer deposition (ALD) are demonstrated to improve the thermal stability of cellulose nanocrystal (CNC) aerogels. ALD is a chemical vapor deposition (CVD) like method in which sequential precursor exposures and self-limited surface reactions produce a conformal...
    Resource Type:
    Dissertation
    Full Text:
    of Oxide Thin Films using Atomic Layer Deposition and Prompt Inorganic Condensation by

  • Development of Amorphous Metal Thin Films for Thermal Inkjet Printing and Microelectronics

    Creator:
    McGlone, John M.
    Abstract:
    Due to a lack of grain boundaries, an amorphous metal thin film (AMTF) possesses advantageous mechanical properties and enhanced chemical stability that is potentially useful for thermal inkjet (TIJ) printing applications. The use of an AMTF as a TIJ resistor or cavitation plate could lead to a thinner TIJ cavitation...
    Resource Type:
    Dissertation
    Full Text:
    -insulator-metal (MIM) tunnel diodes [19, 20, 21, 22, 23] and as a gate metal in a MOSFET [24, 25]. For a

  • Atomic solid state energy scale applied to novel thin-film solar absorbers

    Creator:
    Pelatt, Brian D.
    Abstract:
    The atomic solid state energy (SSE) scale is introduced as a tool for inorganic materials design. The SSE scale is obtained by assessing an average electron affinity (EA) (for a cation) or an average ionization potential (IP) (for an anion) for each atom using data from compounds having that specific...
    Resource Type:
    Dissertation
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    ] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124 5.7 XRD curve for Fe2GeS4 thin films deposited by sputtering and an- nealed in two different

  • Fabrication and characterization of thin-film transistor materials and devices

    Creator:
    Hong, David
    Abstract:
    A class of inorganic thin-film transistor (TFT) semiconductor materials has emerged involving oxides composed of post-transitional cations with (n-1)d¹⁰ns⁰ (n≥4) electronic configurations. This thesis is devoted to the pursuit of topics involving the development of these materials for TFT applications: Deposition of zinc oxide and zinc tin oxide semiconductor layers...
    Resource Type:
    Dissertation
    Full Text:
    and CVD grown silicon dioxide as the gate insulator. The IGZO semiconductor layer is post-deposition

  • Physical vapor deposition of novel thin-film solar absorbers

    Creator:
    Waters, Benjamin E.
    Abstract:
    Current leading thin-film solar cell technologies, i.e., cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS), employ elements which are either toxic (Cd), or rare and/or expensive (In, Te, Ga, and Cd). The aim of this thesis is to investigate new, abundant, non-toxic p-type semiconductors for potential solar absorber application....
    Resource Type:
    Masters Thesis
    Full Text:
    spectrum (red) for comparison. The sample was deposited by PLD with a 300 ◦C substrate temperature and

  • Unique Structural Properties and Motifs of Metal-Oxides from Solids to Clusters

    Creator:
    Malmberg, Christopher E.
    Abstract:
    In this dissertation, the structural properties, thermodynamics and defect behavior of amorphous metal oxides and polyoxometalates are studied. Amorphous metal oxides have many applications, most notably as a semiconducting material used as the active matrix of thin film transistors. Alas, the amorphous nature of these materials makes studying them rather...
    Resource Type:
    Dissertation
    Full Text:
    coordinate oxygens and their defects. By studying oxygen vacancies in a-IGZO it was determined that two

  • Assessment of High Mobility Oxide Thin-Film Transistors

    Creator:
    Stewart, Kevin A.
    Abstract:
    The trend towards higher resolution, faster refresh rate active-matrix liquid-crystal displays (AMLCDs) as well as the emergence of active-matrix organic light-emitting diode (AMOLED) displays is driving the demand for amorphous oxide semiconductor thin-film transistors (AOS TFTs) with higher mobility. A physics-based model for carrier transport in an amorphous semiconductor is...
    Resource Type:
    Dissertation
    Full Text:
    by pulsed laser deposition, and a 140 nm thick Y2O3 layer was used as a gate insulator. The devices

  • Fabrication process assessment and negative bias illumination stress study of IGZO and ZTO TFTs

    Creator:
    Hoshino, Ken
    Abstract:
    Indium-gallium-zinc oxide (IGZO) and zinc-tin oxide (ZTO) are investigated for thin-film transistor (TFT) applications. Negative bias illumination stress (NBIS) is employed for electrical stability assessment. Unpassivated IGZO and ZTO TFTs suffer from severe NBIS instabilities. Zinc-tin-silicon oxide is found to be an effective passivation layer for IGZO and ZTO TFTs,...
    Resource Type:
    Dissertation
    Full Text:
    conduction band edge and the flat layer represents the Fermi level. The model is simplified by assuming