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Filtering by: Creator Hoffman, Jeremy S. Remove constraint Creator: Hoffman, Jeremy S. Committee Member Keszler, Douglas A. Remove constraint Committee Member: Keszler, Douglas A.

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  • Solution-based nanomaterials and thin films for next generation electronics

    Creator:
    Oleksak, Richard P.
    Abstract:
    Nanomaterials are expected to enable significant advances in several technological fields in coming years. Among them, electronics has emerged as one of the most likely benefactors from the ability to control matter on the nanometer-scale. For many electronic devices synthesized nanomaterials must be integrated into thin film structures. Vapor-based deposition...
    Resource Type:
    Dissertation
    Full Text:
    : ______________________________________________________ Gregory S. Herman Nanomaterials are expected to enable significant advances in

  • Design of B-form specific DNA binding oligonucleotide analogues : investigations of novel recognition moieties for triple helix formation

    Creator:
    Hogeland, Jane S.
    Resource Type:
    Dissertation
    Full Text:
    THESIS OF lane S. Hoge land for the degree of Doctor of Philosophy in Chemistry presented on Tune 1

  • Late Pleistocene Slip Rate along the Panamint Valley Fault System, Eastern California

    Creator:
    Choi, Na Hyung
    Abstract:
    The Eastern California Shear Zone (ECSZ) is a broad zone of dextral shear inboard of the North American - Pacific plate boundary. Despite decades of study, the significance of a mismatch between geodetic velocities and geologic fault slip rates across the ECSZ remains incompletely understood. Geodetically determined interseismic strain across...
    Resource Type:
    Masters Thesis
    Full Text:
    Desert (Hoffman, 2009). Profile development indices (PDI) of these soils suggest a strong correlation

  • Iron and copper chalcogenides : photovoltaic absorber candidates and YZrF7 : a new upconversion host, Iron and copper chalcogenides : photovoltaic absorber candidates and YZrF₇ : a new upconversion host

    Creator:
    Jieratum, Vorranutch
    Abstract:
    The materials Fe₂(Si,Ge)(S,Se)₄, Cu₃PS[subscript 4-x]Se[subscript x] (0 ≤ x ≤ 4), and Cu₃PxAs[subscript 1-x]S₄ (0 ≤ x ≤ 1) have been synthesized and studied as new earth-abundant absorbers for single and multijunction photovoltaic cells as well as solar fuel generation. The synthesis, single-crystal growth, and optical and electrical properties of...
    Resource Type:
    Dissertation
    Full Text:
    : ____________________________________________________ Douglas A. Keszler The materials Fe2(Si,Ge)(S,Se)4, Cu3PS4-xSex (0 ≤ x ≤ 4), and Cu3PxAs1

  • Al-In-Sn-O thin-film transistors

    Creator:
    Stewart, Kevin A.
    Abstract:
    The aim of the research undertaken for this thesis was to develop a new high-performance amorphous oxide semiconductor (AOS) for use as a channel layer in a thin-film transistor (TFT). AOS TFTs offer higher electron mobility than the established amorphous silicon based technology. A new channel material comprised of aluminum...
    Resource Type:
    Masters Thesis
    Full Text:
    on-to-off ratio of ION −OF F = 107, and a sub-threshold swing of S = 0.2 V /dec D were achieved

  • Transparent electronics : thin-film transistors and integrated circuits

    Creator:
    Presley, Rick E.
    Abstract:
    This thesis focuses on two aspects of transparent electronics, SnO₂ transparent thin-film transistors (TTFTs) and transparent circuits. Both depletion- and enhancement-mode SnO₂ TTFTs are realized. The maximum effective mobility for the depletion- and enhancement-mode devices are 2 cm²V⁻¹s⁻¹ and 0.8 cm²V⁻¹s⁻¹, respectively. A variety of techniques to decrease the carrier...
    Resource Type:
    Masters Thesis
    Full Text:
    and other parts used to complete this work. This work was funded by the U. S. National Science

  • Assessment of High Mobility Oxide Thin-Film Transistors

    Creator:
    Stewart, Kevin A.
    Abstract:
    The trend towards higher resolution, faster refresh rate active-matrix liquid-crystal displays (AMLCDs) as well as the emergence of active-matrix organic light-emitting diode (AMOLED) displays is driving the demand for amorphous oxide semiconductor thin-film transistors (AOS TFTs) with higher mobility. A physics-based model for carrier transport in an amorphous semiconductor is...
    Resource Type:
    Dissertation
    Full Text:
    ]. . . . . . . . . . . . . . . . . . . . . . 5 2.3 Current TFT semiconductors used in mass-production are a-Si:H, LTP- S, and a-IGZO. Required

  • Physical vapor deposition of novel thin-film solar absorbers

    Creator:
    Waters, Benjamin E.
    Abstract:
    Current leading thin-film solar cell technologies, i.e., cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS), employ elements which are either toxic (Cd), or rare and/or expensive (In, Te, Ga, and Cd). The aim of this thesis is to investigate new, abundant, non-toxic p-type semiconductors for potential solar absorber application....
    Resource Type:
    Masters Thesis
    Full Text:
    white circles), S (large white circles), and Ta (black dots). Large channels in the [010] direc- tion

  • Atomic solid state energy scale applied to novel thin-film solar absorbers

    Creator:
    Pelatt, Brian D.
    Abstract:
    The atomic solid state energy (SSE) scale is introduced as a tool for inorganic materials design. The SSE scale is obtained by assessing an average electron affinity (EA) (for a cation) or an average ionization potential (IP) (for an anion) for each atom using data from compounds having that specific...
    Resource Type:
    Dissertation
    Full Text:
    53 elements from s-, p-, d- and f-blocks of the periodic table. The SSE scale is shown to be related

  • New luminescent materials and high-performance solution-processed oxide thin films

    Creator:
    Jiang, Kai
    Abstract:
    Crystals of an incongruent-melting compound, Ba₃MgSi₂O₈, were grown by the flux method and its structure was determined by single crystal X-ray diffraction methods. Ba₃MgSi₂O₈ crystallizes in trigonal space group P-3[bar]m1 with a = 5.6123(3) Å, c = 7.2667(9) Å and Z = 1. Eu²⁺ ions prefer one crystallographic Ba site...
    Resource Type:
    Dissertation
    Full Text:
    ” projects in my third year and shared his knowledge and experience frankly. Jeremy Anderson, to whom I