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Filtering by: Subject Semiconductor doping Remove constraint Subject: Semiconductor doping Committee Member Marcum, Wade Remove constraint Committee Member: Marcum, Wade

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  • Fracture toughness of void-site-filled skutterudites

    Creator:
    Eilertsen, James S.
    Abstract:
    Thermoelectric materials are playing an increasingly significant role in the global effort to develop sustainable energy technologies. Consequently, the demand for materials with greater thermoelectric efficiency has stimulated the development of state-of-the-art interstitially doped skutterudite-based materials. However, since intermetallics are often embrittled by interstitial substitution, optimal skutterudite-based device design, manufacture,...
    Resource Type:
    Masters Thesis
    Full Text:
    interstitial doping. Both pure and interstitially doped cobalt antimonide skutterudites were synthesized