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Filtering by: Subject Metal semiconductor field-effect transistors -- Noise Remove constraint Subject: Metal semiconductor field-effect transistors -- Noise Committee Member Plant, Thomas K. Remove constraint Committee Member: Plant, Thomas K. Non-Academic Affiliation Oregon State University. Graduate School Remove constraint Non-Academic Affiliation: Oregon State University. Graduate School

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  • Analysis and modeling of GaAs MESFET's for linear integrated circuit design

    Creator:
    Lee, Mankoo
    Abstract:
    A complete Gallium Arsenide Metal Semiconconductor Field Effect Transistor (GaAs MESFET) model including deep-level trap effects has been developed, which is far more accurate than previous equivalent circuit models, for high-speed applications in linear integrated circuit design. A new self-backgating GaAs MESFET model, which can simulate low frequency anomalies, is...
    Resource Type:
    Dissertation
    Full Text:
    ofessor Forbes A complete Gallium Arsenide Metal Semiconconductor Field Effect Transistor (GaAs MESFET

  • Analysis and modeling of electrically long MESFETS and coupled schottky lines

    Creator:
    Mohammed, Ahmed Sarhan
    Abstract:
    The properties of linear active coupled lines consisting of electrically long GaAs MESFET structures are investigated for possible applications as traveling-wave broad-band amplifiers. In addition, the nonlinear coupled Schottky lines are studied for applications as voltage tunable circuit elements. The analysis of the general active asymmetric coupled transmission lines in...
    Resource Type:
    Dissertation
    Full Text:
    ): channel length (length of region I, II). MESFET Metal-Semiconductor Field-Effect Transistor. MOSFET