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Filtering by: Alternative title ssim Conduction processes in metal–insulator–metal diodes with Ta2O5 and Nb2O5 insulators deposited by atomic layer deposition Remove constraint Alternative title ssim: Conduction processes in metal–insulator–metal diodes with Ta2O5 and Nb2O5 insulators deposited by atomic layer deposition Committee Member Tate, Janet Remove constraint Committee Member: Tate, Janet

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  • Investigation of Energy Barrier Heights within Metal-insulator-metal Devices via Internal Photoemission Spectroscopy

    Creator:
    Jenkins, Melanie A.
    Abstract:
    Metal-insulator-metal (MIM) and dual-insulator MIM (MIIM) devices are used in rectennas, hot-electron transistors, single electron transistors, resistive random access memory (RRAM), and capacitors. The performance of these devices relies heavily on the energy barrier height at each metal-insulator interface. Thus, determination of the in-situ electron energy barrier at each interface...
    Resource Type:
    Dissertation
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    on Metal-Insulator-Metal Tunnel Diodes with Atomic Layer Deposited Al2O3 Tunnel Barriers,” J. Vac

  • Wide band gap semiconductors and insulators : synthesis, processing and characterization

    Creator:
    Hersh, Peter A.
    Abstract:
    The work presented here is focused on applying basic principles of solid-state chemistry to the study and development of new wide band-gap semiconductors and insulators for photovoltaic and electronic-device applications. Analysis of crystal structure, band structure, optical band gap, morphology and transport properties provides fundamental insight into materials performance as...
    Resource Type:
    Dissertation
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    helped with work presented in Chapters 3-5 including thin film deposition and optical and electrical

  • Electronic Conduction and Ionic Diffusion in (Bi₀.₅Na₀.₅)TiO₃-(Bi₀.₅K₀.₅)TiO₃-based Thin Films, Electronic Conduction and Ionic Diffusion in (Bi0.5Na0.5)TiO3-(Bi0.5K0.5)TiO3-based Thin Films

    Creator:
    Walenza-Slabe, Joel
    Abstract:
    Solid solutions based on the perovskite ferroelectrics Bi₀.₅Na₀.₅TiO₃ (BNT) and Bi₀.₅K₀.₅TiO₃ (BKT) might someday replace current Pb-based ferroelectric and piezoelectric devices. This is one goal of the Restrictions on Hazardous Substances (RoHS) guidelines seeking to limit Pb in consumer devices. Although the Bi-based ferroelectrics are well suited to the task...
    Resource Type:
    Dissertation
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    beyond 180 °C and 400 kV/cm. Additionally, ionic conduction processes also play a role in

  • Electronic and Optical Properties of Defects in Amorphous Oxide and Transition Metal Dichalcogenide Semiconductors

    Creator:
    Vogt, Kyle
    Abstract:
    The optical and electronic properties of amorphous oxide thin films depend crucially on chemical composition, and deposition process variations which give rise to sub-gap defect states. Consequently, there is a need for a reliable, high-throughput method to extract sub-gap defect densities of states in amorphous oxide thin films. We present...
    Resource Type:
    Dissertation
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    near the conduction band and deep in the sub-gap, with measured peak densities in the range of 1017

  • Copper and iron chalcogenides for efficient solar absorption

    Creator:
    Platt, Heather A. S.
    Abstract:
    This dissertation outlines two approaches for improving the efficiency and reducing the cost of photovoltaic energy generation. First, the structures of known binary copper and iron compounds are used to choose the promising compositions Fe₂XS₄ (X = Si, Ge), Cu₃TaQ₄ (Q = Se, Te), and BaCuQ'F (Q' = S, Se,...
    Resource Type:
    Dissertation
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    orbitals should fall in the conduction band. While p-block metal ions like In3+ and Ga3+ have either

  • Development of oxide semiconductors : materials, devices, and integration

    Creator:
    Chiang, Hai Q.
    Abstract:
    The aim of this dissertation is to develop oxide semiconductors by radio-frequency sputtering for thin-film transistor (TFT) applications. A variety of oxide semiconductors are used as the TFT channel layer, including indium gallium oxide (IGO), zinc tin oxide (ZTO), and indium gallium zinc oxide (IGZO). The variety of materials used...
    Resource Type:
    Dissertation
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    Physics Department have also contributed by assisting with Hall andoptical measurements and assisting in

  • New luminescent materials and high-performance solution-processed oxide thin films

    Creator:
    Jiang, Kai
    Abstract:
    Crystals of an incongruent-melting compound, Ba₃MgSi₂O₈, were grown by the flux method and its structure was determined by single crystal X-ray diffraction methods. Ba₃MgSi₂O₈ crystallizes in trigonal space group P-3[bar]m1 with a = 5.6123(3) Å, c = 7.2667(9) Å and Z = 1. Eu²⁺ ions prefer one crystallographic Ba site...
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    Dissertation
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    early transition metal oxides (TiO2, HfO2, Nb2O5, and V2O5) have been deposited from peroxo-assisted

  • Synthesis and study of transparent p- and n-type semiconductors and luminescent materials

    Creator:
    Park, Cheol-Hee
    Abstract:
    New transparent p- and n-type semiconductors and luminescent materials have been prepared and characterized. Synthesis, structures, optical and electrical properties of new chalcogenide fluoride p-type transparent semiconductors MCuQF (M=Ba, Sr; Q=S, Se, Te) are described. Band-gap tuning and improvement in conductivity through p-type doping are demonstrated in the family. The...
    Resource Type:
    Dissertation
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    prepared by pulsed laser deposition, and their electrical properties have been examined. Results on new

  • Development of Cu-based Thin Films for Optoelectronic Applications

    Creator:
    Angelos, Gregory S.
    Abstract:
    CIGS and CdTe based commercial thin-film solar cells (TFSCs) require an absorber thickness greater than 2 µm and 4 µm, respectively, to adequately absorb the solar spectrum. To efficiently extract photoexcited electrons, these TFSCs require relatively defect-free absorbers with high-minority carrier mobility (> 100 cm2V−1s−1) and long lifetime (> 10...
    Resource Type:
    Dissertation
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    recombination where an electron in the conduction band recombines with a hole in the valence band and emits a