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Filtering by: Creator Seethoff, Terrance Lee Creator Amani, Matin Language English [eng]

Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition

Creator:

Amani, Matin, Chin, Matthew L., Birdwell, A. Glen, O'Regan, Terrance P., Najmaei, Sina, Liu, Zheng, Ajayan, Pulickel M., Lou, Jun, and Dubey, Madan

Abstract:

Molybdenum disulfide (MoS₂) field effect transistors (FET) were fabricated on atomically smooth large-area single layers grown by chemical vapor deposition. The layer qualities and physical properties were characterized using high-resolution Raman and photoluminescence spectroscopy, scanning electron microscopy, and atomic force microscopy. Electronic performance of the FET devices was measured using...

Resource Type:

Article

Full Text:

prepared by chemical vapor deposition Matin Amani,1,2 Matthew L. Chin,1 A. Glen Birdwell,1 Terrance P