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Mobility Assessment of Depletion-Mode Oxide Thin-Film Transistors Using the Comprehensive Depletion-Mode Model

Creator:

Zhou, Fan, Yeh, Bao-Sung, Archila, Kevin A., and Wager, John F.

Abstract:

In an enhancement-mode, n-channel (p-channel) oxide thin-film transistor (TFT), current arises as a consequence of electron (hole) transport within a narrow accumulation layer. The square-law model accurately describes enhancement-mode TFT behavior and establishes the equations appropriate for carrier mobility extraction. In contrast, in a depletion-mode oxide TFT, carrier transport can...

Resource Type:

Article

Full Text:

), Q3027-Q3031. doi:10.1149/2.004409jss 10.1149/2.004409jss Electrochemical Society Version of Record