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Filtering by: Creator Canfield, Philip C. Remove constraint Creator: Canfield, Philip C. Decade 1990-1999 Remove constraint Decade: 1990-1999 Degree Level Doctoral Remove constraint Degree Level: Doctoral Subject Gallium arsenide semiconductors Remove constraint Subject: Gallium arsenide semiconductors

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  • A P-well GaAs MESFET technology

    Creator:
    Canfield, Philip C.
    Abstract:
    The semiconductor gallium arsenide (GaAs) has many potential advantages over the more widely used semiconductor silicon (Si). These include higher low field mobility, semi-insulating substrates, a direct band-gap, and greater radiation hardness. All these advantages offer distinct opportunities for implementation of new circuit functions or extension of the operating conditions...
    Resource Type:
    Dissertation