The defect mechanisms that underpin the high energy density dielectric 0.8BaTiO₃–0.2Bi(Zn₁/₂Ti₁/₂) O₃
were investigated. Characterization of the nominally stoichiometric composition revealed the
presence of a Ti³⁺-related defect center, which is correlated with lower resistivities and an
electrically heterogeneous microstructure. In compositions with 2 mol. % Ba-deficiency, a barium
vacancy-oxygen vacancy...
Full Text:
. B 54, 15284 (1996).
21V. V. Laguta, A. M. Slipenyuk, I. P. Bykov, M. D. Glinchuk, M.
Maglione, A. G