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Filtering by: Subject Metal semiconductor field-effect transistors -- Noise Remove constraint Subject: Metal semiconductor field-effect transistors -- Noise Creator Gang, Yung Jin, 1957 Remove constraint Creator: Gang, Yung Jin, 1957 Non-Academic Affiliation Oregon State University. Graduate School Remove constraint Non-Academic Affiliation: Oregon State University. Graduate School

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  • Ultra low voltage DRAM current sense amplifier with body bias techniques

    Creator:
    Gang, Yung-jin, 1957-
    Abstract:
    The major limiting factor of DRAM access time is the low transconductance of the MOSFET's which have only limited current drive capability. The bipolar junction transistor(BJT) has a collector current amplification factor, β, times base current and is limited mostly by the willingness to supply this base current. This collector...
    Resource Type:
    Dissertation
    Full Text:
    have only limited current drive capability. The bipolar junction transistor(BJT) has a collector